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US 11,114,455 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming holes passing through a stacked structure, surrounding channel structures, and replacing some of the materials of the stacked structure through the holes.
Claims14
A method of manufacturing a semiconductor device, the method comprising:
- forming a stacked structure, the stacked structure comprising first material layers and second material layers that are alternately stacked in a vertical direction;
- forming channel structures passing through the stacked structure;
- forming isolation insulating layers extending in a first horizontal direction in the stacked structure, the first horizontal direction crossing the vertical direction, each of the isolation insulating layers passing through at least one of the first material layers and at least one of the second material layers;
- forming slits and holes passing through the stacked structure;
- and
- forming material patterns through the slits and the holes, which replace the second material layers,
- wherein the slits extend in the first horizontal direction,
- wherein the material patterns surround the channel structures, and
- wherein the channel structures comprise first channel structures abutting each of the isolation insulating layers and arranged next to each other in the first horizontal direction.
6 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a stacked structure, the stacked structure comprising first material layers and second material layers that are alternately stacked in a vertical direction;
- forming channel structures passing through the stacked structure;
- forming an isolation insulating layer passing through at least one of the first material layers and at least one of the second material layers;
- forming holes and a slit passing through the stacked structure, wherein the slit is spaced apart from the isolation insulating layer with the channel structures interposed between the isolation insulating layer and the slit, and wherein the holes are disposed between the slit and the isolation insulating layer;
- and
- forming material patterns surrounding the channel structures by replacing the second material layers with the material patterns through the holes and the slit.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a stacked structure, the stacked structure comprising first material layers and second material layers that are alternately stacked in a vertical direction;
- forming channel structures passing through the stacked structure;
- forming holes and slits passing through the stacked structure, wherein the holes include first holes, the first holes being arranged next to each other in a first horizontal direction crossing the vertical direction, and second holes, the second holes being arranged next to each other in the first horizontal direction, wherein the channel structures are arranged between the first holes and the second holes, and wherein the slits extend in a second horizontal direction crossing the vertical direction;
- and
- forming material patterns that replace the second material layers through the holes and the slits, wherein the material patterns surround the channel structures,
- the method further comprising:
- forming isolation insulating layers extending in the second horizontal direction in the stacked structure, each of the isolation insulating layers passing through at least one of the first material layers and at least one of the second material layers,
- wherein the channel structures comprise:
- first channel structures abutting each of the isolation insulating layers and arranged next to each other in the second horizontal direction;
- and
- second channel structures abutting each of the slits and arranged next to each other in the second horizontal direction.
8 more elements
Dependencies are inferred from the claim text.