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US 11,114,454 B2Granted
Semiconductor device
AssigneeSK hynix Inc.
InventorsJin Won Lee, Nam Jae Lee
Life of this patent
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Abstract
A semiconductor device includes a source structure penetrated by a first penetrating portion, a first stack structure disposed on the source structure and penetrated by a second penetrating portion overlapping the first penetrating portion.
Claims20
A semiconductor device, comprising:
- a source structure penetrated by a first penetrating portion;
- a first stack structure disposed on the source structure and penetrated by a second penetrating portion overlapping the first penetrating portion;
- a second stack structure disposed on the first stack structure and extending to overlap the first penetrating portion and the second penetrating portion;
- and
- channel pillars passing through the second stack structure and the first stack structure,
- wherein the first stack structure includes a first region penetrated by the channel pillars and second regions extending from the first region to be disposed at opposite sides of the second penetrating portion, and
- wherein the second stack structure includes a dummy stack structure overlapping the second penetrating portion and a gate stack structure extending to overlap the first region and the second region.
4 more elements
A semiconductor device, comprising:
- a source structure penetrated by a first penetrating portion;
- a first stack structure disposed on the source structure and penetrated by a second penetrating portion overlapping the first penetrating portion;
- a second stack structure disposed on the first stack structure and extending to overlap the first penetrating portion and the second penetrating portion;
- channel pillars passing through the second stack structure and the first stack structure;
- and
- supporting structures passing through a portion of the first stack structure adjacent to the second penetrating portion and extending to pass through the second stack structure,
- wherein the supporting structures include at least one of insulating pillars, an insulating bar extending further than each of the insulating pillars in a horizontal direction, and dummy channel pillars having a same structure as the channel pillars.
4 more elements
A semiconductor device, comprising:
- a source structure penetrated by a first penetrating portion;
- a first stack structure disposed on the source structure and divided into memory blocks by first slits;
- a second penetrating portion passing through the first stack structure of each of the memory blocks and overlapping the first penetrating portion;
- a second stack structure disposed on the first stack structure and extending to overlap the first penetrating portion;
- and
- channel pillars passing through the second stack structure and the first stack structure,
- wherein the source structure includes a protruding portion protruding further towards a center region of the second penetrating portion than an edge of the first stack structure defined by the second penetrating portion in a horizontal direction.
4 more elements
A semiconductor device, comprising:
- a source structure including a doped semiconductor layer and an etch stop layer and penetrated by a first penetrating portion;
- a first stack structure disposed on the source structure and penetrated by a second penetrating portion overlapping the first penetrating portion;
- and
- a contact plug formed in the second penetrating portion and extending into the first penetrating portion,
- wherein the second penetrating portion is wider than the first penetrating portion,
- wherein a distance between the contact plug and a sidewall of the second penetrating portion is greater than a distance between the contact plug and a sidewall of the first penetrating portion,
- wherein the contact plug does not structurally contact the doped semiconductor layer, and
- wherein the bottom of the second penetration portion is defined by the top most surface of the source structure.
5 more elements
Dependencies are inferred from the claim text.