# US 11,114,447 B2 · SRAM device provided with a plurality of sheets serving as a channel region > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,114,447 B2 - Document ID: US11114447B2 - Status: Granted - Kind: B2 - Application number: 16/793,912 - Filed: 2020-02-18 - Published: 2020-06-11 - Granted: 2021-09-07 - Earliest claimed: 2016-01-04 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Donghun Lee; TaeYong Kwon; Dongwon Kim - Web page: https://patentgrep.com/patent/US11114447B2 ## CPC - H10B 10/12: {comprising a MOSFET load element} - H10D 1/00: Resistors, capacitors or inductors - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10D 64/258: {characterised by the relative positions of the source or drain electrodes with respect to the gate electrode} - H10D 84/85: Complementary IGFETs, e.g. CMOS - H10D 84/8311: {the IGFETs characterised by having different channel structures} - H10D 84/851: {comprising IGFETs having stacked nanowire, nanosheet or nanoribbon channels} - Y02D 10/00: Energy efficient computing, e.g. low power processors, power management or thermal management - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - Y02D: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE ## Abstract An SRAM device includes first, second and third transistors, which are used as a pass gate transistor, a pull-down transistor, and a pull-up transistor, respectively. A channel region of each transistor may include a plurality of semiconductor sheets that are vertically stacked on a substrate. The semiconductor sheets used as the channel regions of the first and second transistors may have a width greater than the semiconductor sheets used as channel regions of the third transistor. ## Claims ### Claim 1 An SRAM device comprising: a substrate including a first NMOS region, a second NMOS region and a PMOS region; a first pull-down transistor disposed in the first NMOS region, the first pull-down transistor including a first gate structure, a first source/drain disposed on a first side of the first gate structure, a second source/drain disposed on a second side of the first gate structure and a first channel disposed below the first gate structure and connecting the first source/drain and the second source/drain; a second pull-down transistor disposed in the second NMOS region, the second pull-down transistor including a second gate structure, a third source/drain disposed on a first side of the second gate structure, a fourth source/drain disposed on a second side of the second gate structure and a second channel disposed below the second gate structure and connecting the third source/drain and the fourth source/drain; a first pull-up transistor disposed in the PMOS region, the first pull-up transistor including a third gate structure, a fifth source/drain disposed on a first side of the third gate structure, a sixth source/drain disposed on a second side of the third gate structure and a third channel disposed below the third gate structure and connecting the fifth source/drain and the sixth source/drain; a second pull-up transistor disposed in the PMOS region, the second pull-up transistor including a fourth gate structure, a seventh source/drain disposed on a first side of the fourth gate structure, an eighth source/drain disposed on a second side of the fourth gate structure and a fourth channel disposed below the fourth gate structure and connecting the seventh source/drain and the eighth source/drain; a first pass gate transistor disposed in the first NMOS region, the first pass gate transistor including a fifth gate structure, a ninth source/drain disposed on a first side of the fifth gate structure, a tenth source/drain disposed on a second side of the fifth gate structure and a fifth channel disposed below the fifth gate structure and connecting the ninth source/drain and the tenth source/drain; and a second pass gate transistor disposed in the second NMOS region, the second pass gate transistor including a sixth gate structure, an eleventh source/drain disposed on a first side of the sixth gate structure, a twelfth source/drain disposed on a second side of the sixth gate structure and a sixth channel disposed below the sixth gate structure and connecting the eleventh source/drain and the twelfth source/drain, wherein the first pull-down transistor and the first pull-up transistor form a first inverter, the second pull-down transistor and the second pull-up transistor form a second inverter, the first channel includes a first semiconductor sheet and a second semiconductor sheet that is stacked on and spaced apart from the first semiconductor sheet, the second channel includes a third semiconductor sheet and a fourth semiconductor sheet that is stacked on and spaced apart from the third semiconductor sheet, the third channel includes a fifth semiconductor sheet and a sixth semiconductor sheet that is stacked on and spaced apart from the fifth semiconductor sheet, the fourth channel includes a seventh semiconductor sheet and an eighth semiconductor sheet that is stacked on and spaced apart from the seventh semiconductor sheet, the fifth channel includes a ninth semiconductor sheet and a tenth semiconductor sheet that is stacked on and spaced apart from the ninth semiconductor sheet, the sixth channel includes an eleventh semiconductor sheet and a twelfth semiconductor sheet that is stacked on and spaced apart from the eleventh semiconductor sheet, a width of the first semiconductor sheet is greater than a width of the fifth semiconductor sheet, and a width of the ninth semiconductor sheet is greater than the width of the fifth semiconductor sheet, a ratio of the width of the first semiconductor sheet to the width of the fifth semiconductor sheet is 1.4 to 1.9 or 2.1 to 10, and a ratio of the width of the ninth semiconductor sheet to the width of the fifth semiconductor sheet is 1.4 to 1.9 or 2.1 to 10. ### Claim 2 (depends on 1) The SRAM device of claim 1, wherein the first gate structure includes a first gate electrode surrounding the first semiconductor sheet and the second semiconductor sheet, the second gate structure includes a second gate electrode surrounding the third semiconductor sheet and the fourth semiconductor sheet, and the third gate structure includes a third gate electrode surrounding the fifth semiconductor sheet and the sixth semiconductor sheet. ### Claim 3 (depends on 2) The SRAM device of claim 2, wherein the first gate electrode surrounds an outer surface of the first channel, the second gate electrode surrounds an outer surface of the second channel, and the third gate electrode surrounds an outer surface of the third channel. ### Claim 4 (depends on 1) The SRAM device of claim 1, further comprising a first barrier insulating pattern disposed between the first source/drain and the first side of the first gate structure, the first barrier insulating pattern being disposed between the first semiconductor sheet and the second semiconductor sheet. ### Claim 5 (depends on 1) The SRAM device of claim 1, wherein each of the first pull-down transistor, the first pull-up transistor and the first pass gate transistor is a gate-all-around type field effect transistor. ### Claim 6 An SRAM device comprising: a substrate including a first NMOS region, a second NMOS region and a PMOS region; a first pull-down transistor disposed in the first NMOS region, the first pull-down transistor including a first gate structure, a first source/drain disposed on a first side of the first gate structure, a second source/drain disposed on a second side of the first gate structure and a first channel disposed below the first gate structure and connecting the first source/drain and the second source/drain; a second pull-down transistor disposed in the second NMOS region, the second pull-down transistor including a second gate structure, a third source/drain disposed on a first side of the second gate structure, a fourth source/drain disposed on a second side of the second gate structure and a second channel disposed below the second gate structure and connecting the third source/drain and the fourth source/drain; a first pull-up transistor disposed in the PMOS region, the first pull-up transistor including a third gate structure, a fifth source/drain disposed on a first side of the third gate structure, a sixth source/drain disposed on a second side of the third gate structure and a third channel disposed below the third gate structure and connecting the fifth source/drain and the sixth source/drain; a second pull-up transistor disposed in the PMOS region, the second pull-up transistor including a fourth gate structure, a seventh source/drain disposed on a first side of the fourth gate structure, an eighth source/drain disposed on a second side of the fourth gate structure and a fourth channel disposed below the fourth gate structure and connecting the seventh source/drain and the eighth source/drain; a first pass gate transistor disposed in the first NMOS region, the first pass gate transistor including a fifth gate structure, a ninth source/drain disposed on a first side of the fifth gate structure, a tenth source/drain disposed on a second side of the fifth gate structure and a fifth channel disposed below the fifth gate structure and connecting the ninth source/drain and the tenth source/drain; and a second pass gate transistor disposed in the second NMOS region, the second pass gate transistor including a sixth gate structure, an eleventh source/drain disposed on a first side of the sixth gate structure, a twelfth source/drain disposed on a second side of the sixth gate structure and a sixth channel disposed below the sixth gate structure and connecting the eleventh source/drain and the twelfth source/drain, wherein the first pull-down transistor and the first pull-up transistor form a first inverter, the second pull-down transistor and the second pull-up transistor form a second inverter, each of the first, second, third, fourth, fifth and sixth gate structures includes a gate electrode and a gate insulating layer disposed on sidewalls of the gate electrode, the first channel includes a first semiconductor sheet and a second semiconductor sheet that is stacked on and spaced apart from the first semiconductor sheet, the second channel includes a third semiconductor sheet and a fourth semiconductor sheet that is stacked on and spaced apart from the third semiconductor sheet, the third channel includes a fifth semiconductor sheet and a sixth semiconductor sheet that is stacked on and spaced apart from the fifth semiconductor sheet, the fourth channel includes a seventh semiconductor sheet and an eighth semiconductor sheet that is stacked on and spaced apart from the seventh semiconductor sheet, the fifth channel includes a ninth semiconductor sheet and a tenth semiconductor sheet that is stacked on and spaced apart from the ninth semiconductor sheet, the sixth channel includes an eleventh semiconductor sheet and a twelfth semiconductor sheet that is stacked on and spaced apart from the eleventh semiconductor sheet, and a ratio of a width of the first semiconductor sheet to a width of the fifth semiconductor sheet is 1.4 to 1.9, or 2.1 to 10, and a ratio of the width of the ninth semiconductor sheet to the width of the fifth semiconductor sheet is 1.4 to 1.9, or 2.1 to 10. ### Claim 7 (depends on 6) The SRAM device of claim 6, wherein each of the first, second, third, fourth, fifth and sixth gate structures includes a gate spacer disposed on a sidewall of the gate insulating layer, and a gate capping pattern disposed on a top surface of the gate electrode and a top surface of the gate insulating layer. ### Claim 8 (depends on 6) The SRAM device of claim 6, wherein the gate electrode includes metal nitrides including TiN, WN and TaN, or includes metals including Ti, W and Ta. ### Claim 9 (depends on 6) The SRAM device of claim 6, wherein each of the first to the twelfth semiconductor sheets includes Si, SiGe or Ge. ### Claim 10 (depends on 6) The SRAM device of claim 6, wherein the width of the first semiconductor sheet is the same as the ninth semiconductor sheet. ### Claim 11 An SRAM device comprising: a substrate including a first NMOS region, a second NMOS region and a PMOS region; a first pull-down transistor disposed in the first NMOS region, the first pull-down transistor including a first gate structure, a first source/drain disposed on a first side of the first gate structure, a second source/drain disposed on a second side of the first gate structure and a first channel disposed below the first gate structure and connecting the first source/drain and the second source/drain; a second pull-down transistor disposed in the second NMOS region, the second pull-down transistor including a second gate structure, a third source/drain disposed on a first side of the second gate structure, a fourth source/drain disposed on a second side of the second gate structure and a second channel disposed below the second gate structure and connecting the third source/drain and the fourth source/drain; a first pull-up transistor disposed in the PMOS region, the first pull-up transistor including a third gate structure, a fifth source/drain disposed on a first side of the third gate structure, a sixth source/drain disposed on a second side of the third gate structure and a third channel disposed below the third gate structure and connecting the fifth source/drain and the sixth source/drain; a second pull-up transistor disposed in the PMOS region, the second pull-up transistor including a fourth gate structure, a seventh source/drain disposed on a first side of the fourth gate structure, an eighth source/drain disposed on a second side of the fourth gate structure and a fourth channel disposed below the fourth gate structure and connecting the seventh source/drain and the eighth source/drain; a first pass gate transistor disposed in the first NMOS region, the first pass gate transistor including a fifth gate structure, a ninth source/drain disposed on a first side of the fifth gate structure, a tenth source/drain disposed on a second side of the fifth gate structure and a fifth channel disposed below the fifth gate structure and connecting the ninth source/drain and the tenth source/drain; and a second pass gate transistor disposed in the second NMOS region, the second pass gate transistor including a sixth gate structure, an eleventh source/drain disposed on a first side of the sixth gate structure, a twelfth source/drain disposed on a second side of the sixth gate structure and a sixth channel disposed below the sixth gate structure and connecting the eleventh source/drain and the twelfth source/drain, wherein the first pull-down transistor and the first pull-up transistor form a first inverter, the second pull-down transistor and the second pull-up transistor form a second inverter, the first channel includes a first semiconductor sheet, a second semiconductor sheet that is stacked on and spaced apart from the first semiconductor sheet, and a third semiconductor sheet that is stacked on and spaced apart from the second semiconductor sheet, the second channel includes a fourth semiconductor sheet and a fifth semiconductor sheet that is stacked on and spaced apart from the fourth semiconductor sheet, and a sixth semiconductor sheet that is stacked on and spaced apart from the fifth semiconductor sheet, the third channel includes a seventh semiconductor sheet and an eighth semiconductor sheet that is stacked on and spaced apart from the seventh semiconductor sheet, and a ninth semiconductor sheet that is stacked on and spaced apart from the eighth semiconductor sheet, the fourth channel includes a tenth semiconductor sheet and an eleventh semiconductor sheet that is stacked on and spaced apart from the tenth semiconductor sheet, and a twelfth semiconductor sheet that is stacked on and spaced apart from the eleventh semiconductor sheet, the fifth channel includes a thirteenth semiconductor sheet and a fourteenth semiconductor sheet that is stacked on and spaced apart from the thirteenth semiconductor sheet, and a fifteenth semiconductor sheet that is stacked on and spaced apart from the fourteenth semiconductor sheet, the sixth channel includes a sixteenth semiconductor sheet and a seventeenth semiconductor sheet that is stacked on and spaced apart from the sixteenth semiconductor sheet, and an eighteenth semiconductor sheet that stacked on and spaced apart from the seventeenth semiconductor sheet, a width of the first semiconductor sheet is greater than a width of the seventh semiconductor sheet, a width of the thirteenth semiconductor sheet is greater than the width of the seventh semiconductor sheet, and the first gate structure includes a first gate electrode surrounding the first semiconductor sheet, the second semiconductor sheet and the third semiconductor sheet, a ratio of the width of the first semiconductor sheet to the width of the seventh semiconductor sheet is 1.4 to 1.9, or 2.1 to 10, and a ratio of the width of the thirteenth semiconductor sheet to the width of the seventh semiconductor sheet is 1.4 to 1.9 or 2.1 to 10. ### Claim 12 (depends on 11) The SRAM device of claim 11, wherein the second gate structure includes a second gate electrode surrounding the fourth semiconductor sheet, the fifth semiconductor sheet and the sixth semiconductor sheet, and the third gate structure includes a third gate electrode surrounding the seventh semiconductor sheet, the eighth semiconductor sheet and the ninth semiconductor sheet. ### Claim 13 (depends on 11) The SRAM device of claim 11, wherein each of the first pull-down transistor, the first pull-up transistor, the first pass gate transistor, the second pull-down transistor, the second pull-up transistor and the second pass gate transistor is a gate-all-around type field effect transistor.