# US 11,114,446 B2 · SRAM with hierarchical bit lines in monolithic 3D integrated chips > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,114,446 B2 - Document ID: US11114446B2 - Status: Granted - Kind: B2 - Application number: 16/349,242 - Filed: 2016-12-29 - Published: 2019-09-05 - Granted: 2021-09-07 - Earliest claimed: 2016-12-29 - Assignees: Intel Corporation - Applicants: Intel Corporation - Inventors: Yih Wang - Web page: https://patentgrep.com/patent/US11114446B2 ## CPC - H10B 10/12: {comprising a MOSFET load element} - G11C 11/412: using field-effect transistors only - G11C 11/417: for memory cells of the field-effect type - G11C 11/419: Read-write [R-W] circuits - H10B 10/18: {Peripheral circuit regions} - H10P 50/283: {by chemical means} - H10W 20/056: {by filling conductive material into holes, grooves or trenches} - H10W 20/081: {by forming openings in the dielectric parts} - H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes - H10W 20/43: Layouts of interconnections - G11C 7/18: Bit line organisation; Bit line lay-out - G11C 2207/002: Isolation gates, i.e. gates coupling bit lines to the sense amplifier - G11C 2207/005: Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines - H10B: ELECTRONIC MEMORY DEVICES - G11C: STATIC STORES (semiconductor memory devices H10B) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A memory device includes a first plurality of memory cells, a second plurality of memory cells, and a local sense amplifier between the first plurality of memory cells and the second plurality of memory cells, all on a first level, and a local bit line on a second level. The second level is vertically separated by one or more first inter-level dielectric layers from the first level in a first direction and the local bit line is electrically coupled to each memory cell of the first plurality of memory cells and the second plurality of memory cells, as well as the local sense amplifier. The memory device also includes a global bit line on a third level vertically separated by one or more inter-level dielectric layers from the first level in a second direction opposite the first direction, with the global bit line electrically coupled to the local sense amplifier. ## Claims ### Claim 1 A memory device, comprising: a first plurality of memory cells extending laterally on a first level; a second plurality of memory cells extending laterally on the first level; a local sense amplifier on the first level between the first plurality of memory cells and the second plurality of memory cells; a local bit line extending laterally on a second level, the second level vertically separated by one or more first inter-level dielectric layers from the first level in a first direction, the local bit line electrically coupled to each memory cell of the first plurality of memory cells, each memory cell of the second plurality of memory cells, and the local sense amplifier; and a global bit line extending laterally on a third level vertically separated by one or more second inter-level dielectric layers from the first level in a second direction opposite the first direction, the global bit line electrically coupled to the local sense amplifier. ### Claim 2 (depends on 1) The memory device of claim 1, further comprising: a plurality of local sense amplifiers; a plurality of local bit lines; and a global sense amplifier on the first level electrically coupled to the global bit line. ### Claim 3 (depends on 1) The memory device of claim 1, further comprising a first plurality of inter-layer interconnects through the one or more first inter-level dielectric layers to electrically couple the local bit line to each memory cell of the first plurality of memory cells, each memory cell of the second plurality of memory cells, and the local sense amplifier. ### Claim 4 (depends on 3) The memory device of claim 3, further comprising a second plurality of inter-layer interconnects through the one or more second inter-level dielectric layers to electrically couple the global bit line to the local sense amplifier. ### Claim 5 (depends on 1) The memory device of claim 1, wherein a power supply extends laterally along the third level. ### Claim 6 (depends on 1) The memory device of claim 1, wherein the local bit line is wider than the global bit line. ### Claim 7 (depends on 1) The memory device of claim 1, wherein the local bit line is a first local bit line and the global bit line is a first global bit line, the memory device further comprising: a second local bit line extending laterally on the second level, the second local bit line electrically coupled to each memory cell of the first plurality of memory cells, each memory cell of the second plurality of memory cells, and the local sense amplifier; and a second global bit line extending laterally on the third level, the second global bit line electrically coupled to the local sense amplifier. ### Claim 8 (depends on 7) The memory device of claim 7, further comprising: a first plurality of wordlines extending laterally on a fourth level vertically separated by one or more third inter-level dielectric layers from the third level in the second direction, each wordline of the first plurality of wordlines electrically coupled to the first local bit line, the second local bit line, and a memory cell of the first plurality of memory cells; and a second plurality of wordlines extending laterally on the fourth level, each wordline of the second plurality of wordlines electrically coupled to the first local bit line, the second local bit line, and a memory cell of the second plurality of memory cells. ### Claim 9 (depends on 8) The memory device of claim 8, further comprising: a third plurality of inter-layer interconnects through the one or more first inter-level dielectric layers, the one or more second inter-level dielectric layers, and the one or more third inter-level dielectric layers to electrically couple each wordline to the local sense amplifier; and a fourth plurality of inter-layer interconnects through the one or more second inter-level dielectric layers and the one or more third inter-level dielectric layers to electrically couple each wordline to one memory cell of either the first plurality of memory cells or the second plurality of memory cells. ### Claim 10 (depends on 9) The memory device of claim 9, wherein the memory device is a static random access memory cell. ### Claim 11 A memory device, comprising: a plurality of memory cells over a substrate, the substrate having a front side opposite a backside; a local sense amplifier; a backside interconnect beneath the backside of the substrate, the backside interconnect including a local bit line, the local bit line electrically coupled to each memory cell and the local sense amplifier; and a frontside interconnect over the front side of the substrate, the frontside interconnect including a global bit line, the global bit line electrically coupled to the local sense amplifier. ### Claim 12 (depends on 11) The memory device of claim 11, further comprising a global sense amplifier electrically coupled to the global bit line. ### Claim 13 (depends on 11) The memory device of claim 11, wherein the local bit line is wider than the global bit line. ### Claim 14 (depends on 11) The memory device of claim 11, wherein the local bit line is a first local bit line and the global bit line is a first global bit line, and the backside interconnect includes a second local bit line, and the frontside interconnect includes a second global bit line. ### Claim 15 (depends on 14) The memory device of claim 14, wherein the frontside interconnect further includes a plurality of word lines, each wordline coupled to the first local bitline, the second local bit line, and a memory cell of the plurality of memory cells. ### Claim 16 A memory device, comprising: a plurality of memory cells; a local sense amplifier; a backside interconnect including a local bit line, the local bit line electrically coupled to each memory cell and the local sense amplifier; and a frontside interconnect including a global bit line, the global bit line electrically coupled to the local sense amplifier, wherein the local bit line is wider than the global bit line. ### Claim 17 A memory device, comprising: a plurality of memory cells; a local sense amplifier; a backside interconnect including a local bit line, the local bit line electrically coupled to each memory cell and the local sense amplifier; and a frontside interconnect including a global bit line, the global bit line electrically coupled to the local sense amplifier, wherein the local bit line is a first local bit line and the global bit line is a first global bit line, and the backside interconnect includes a second local bit line, and the frontside interconnect includes a second global bit line, wherein the second local bit line is electrically coupled to the local sense amplifier, and wherein the frontside interconnect further includes a plurality of word lines, each wordline coupled to the first local bitline, the second local bit line, and a memory cell of the plurality of memory cells.