# US 11,114,444 B2 · Semiconductor device with conductive cap layer over conductive plug and method for forming the same

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- Number: US 11,114,444 B2
- Document ID: US11114444B2
- Status: Granted
- Kind: B2
- Application number: 16/422,608
- Filed: 2019-05-24
- Published: 2020-11-26
- Granted: 2021-09-07
- Earliest claimed: 2019-05-24
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Hung-Chi Tsai
- Web page: https://patentgrep.com/patent/US11114444B2

## CPC

- H10B 12/485: {Bit line contacts}
- H10B 12/30: {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells}
- H10B 12/482: {Bit lines}
- H10B 12/488: {Word lines}
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor device includes a semiconductor substrate, a first word line and a second word line disposed over the semiconductor substrate, and a conductive plug disposed between the first word line and the second word line. The semiconductor device also includes a conductive cap layer disposed over the conductive plug, wherein a top surface and a portion of a sidewall surface of the conductive plug are covered by the conductive cap layer. The semiconductor device further includes a bit line disposed over the conductive cap layer, wherein the bit line is electrically connected to the conductive plug.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor substrate;
a first word line and a second word line disposed over the semiconductor substrate;
a conductive plug disposed between the first word line and the second word line;
a conductive cap layer directly disposed over the conductive plug, wherein a top surface and a portion of a sidewall surface of the conductive plug are completely covered by and directly contacted with the conductive cap layer;
a dielectric layer disposed over the first word line and the second word line, wherein the portion of the sidewall surface of the conductive plug protrudes from the dielectric layer, wherein the top surface of the conductive plug is higher than a topmost surface of the dielectric layer; and
a bit line disposed over the conductive cap layer, wherein the bit line is electrically connected to the conductive plug.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the conductive plug comprises copper, and the conductive cap layer comprises copper-germanium alloy.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the sidewall surface of the conductive plug is directly over the first word line and the second word line.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the conductive cap layer is in direct contact with the dielectric layer.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, further comprising:
a conductive via disposed between the bit line and the conductive cap layer, wherein a width of the conductive cap layer is greater than a width of the conductive via, and the bit line is electrically connected to the conductive plug through the conductive via and the conductive cap layer.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, further comprising:
a source/drain (S/D) region disposed in the semiconductor substrate and between the first word line and the second word line, wherein the bit line is electrically connected to the S/D region.

### Claim 7

A semiconductor device, comprising:
a semiconductor substrate;
a first word line and a second word line disposed over the semiconductor substrate;
a conductive plug disposed between the first word line and the second word line, wherein a sidewall surface of the conductive plug is over the first word line and the second word line;
a dielectric layer covering the first word line and the second word line, wherein a lower portion of the sidewall surface of the conductive plug is surrounded by the dielectric layer, wherein the top surface of the conductive plug is higher than a topmost surface of the dielectric layer;
a conductive cap layer directly disposed over the conductive plug, wherein an upper portion of the sidewall surface of the conductive plug is completely surrounded by and directly contacted with the conductive cap layer; and
a bit line disposed over the conductive cap layer, wherein the bit line is electrically connected to the conductive plug.

### Claim 8 (depends on 7)

The semiconductor device of claim 7, wherein the sidewall surface of the conductive plug is entirely covered by the conductive cap layer and the dielectric layer.

### Claim 9 (depends on 7)

The semiconductor device of claim 7, further comprising:
an insulating layer disposed over the dielectric layer and the conductive cap layer, wherein a portion of the insulating layer is sandwiched between the conductive cap layer and the dielectric layer.

### Claim 10 (depends on 9)

The semiconductor device of claim 9, further comprising:
a conductive via disposed between the bit line and the conductive cap layer, wherein the insulating layer extends between the bit line and the conductive cap layer; and
a source/drain (S/D) region disposed in the semiconductor substrate, wherein the bit line is electrically connected to the S/D region through the conductive via, the conductive cap layer and the conductive plug.

### Claim 11 (depends on 7)

The semiconductor device of claim 7, wherein the conductive plug is made of copper, and the conductive cap layer is made of a copper-germanium alloy.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, wherein the copper-germanium alloy is Cu3Ge.