US 11,114,441 B1 · Semiconductor memory device

Abstract

A semiconductor memory device includes a substrate, a plurality of landing pads, a first conducting layer, a plurality of first capacitors, a plurality of second capacitors, a second conducting layer and a plurality of third capacitors. The substrate has an active area, and the active area has a first area, a second area and a third area. The third area surrounds the first area. The second area surrounds the first area and the third area. The landing pads are disposed on the first area. The first conducting layer is disposed on the second area. The first capacitors are disposed on the landing pads respectively. The second capacitors are disposed on the first conducting layer. The second conducting layer is disposed on the second capacitors. The third capacitors are disposed in the third area. The second conducting layer is not electrically connected to the third capacitors.

Claims10

Dependent claims

A semiconductor memory device, comprising:

a substrate having an active area, wherein the active area has a first area, a second area and a third area, the third area surrounds the first area, the second area surrounds the first area and the third area;
a plurality of landing pads disposed on the first area;
a first conducting layer disposed on the second area;
a plurality of first capacitors disposed on the landing pads respectively;
a plurality of second capacitors disposed on the first conducting layer;
a second conducting layer disposed on the second capacitors;
and
a plurality of third capacitors disposed in the third area, wherein the second conducting layer is not electrically connected to the third capacitors.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor memory device

Life of this patent

Semiconductor memory device

Life of this patent

Abstract

Claims10