# US 11,114,431 B2 · Electrostatic discharge protection device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,114,431 B2 - Document ID: US11114431B2 - Status: Granted - Kind: B2 - Application number: 16/674,098 - Filed: 2019-11-05 - Published: 2020-03-05 - Granted: 2021-09-07 - Earliest claimed: 2015-10-10 - Assignees: Semiconductor Manufacturing International (Beijing) Corporation; Semiconductor Manufacturing International (Shanghai) Corporation - Applicants: Semiconductor Manufacturing International (Beijing) Corporation; Semiconductor Manufacturing International (Shanghai) Corporation - Inventors: Yong Li - Web page: https://patentgrep.com/patent/US11114431B2 ## CPC - H10D 89/811: {using FETs as protective elements} - H10D 30/024: {of fin field-effect transistors [FinFET]} - H10D 30/0241: {doping of vertical sidewalls, e.g. using tilted or multi-angled implants} - H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates} - H10D 30/6212: {having fin-shaped semiconductor bodies having non-rectangular cross-sections} - H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)} - H10D 84/0158: {the components including FinFETs} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D 84/834: {comprising FinFETs} - H10D 89/60: Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] - H10P 30/204: {into Group IV semiconductors} - H10P 30/21: {of electrically active species} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Electrostatic discharge (ESD) protection device is provided. An ESD device includes a substrate having an input region; a plurality of fins on the substrate in the input region; a well region, doped with first-type ions, in the plurality of fins and in the substrate; an epitaxial layer on each fin in the input region; a drain region, doped with second-type ions, in a top portion of each fin and in the epitaxial layer; an extended drain region, doped with the second-type ions, in a bottom portion of each fin to connect to the drain region and in a portion of the substrate, in the input region; and a counter-doped region, doped with the first-type ions, in a portion of the substrate between two adjacent fins to insulate adjacent extended drain regions. ## Claims ### Claim 1 An electrostatic discharge (ESD) protection device, comprising: a substrate having an input region; a plurality of fins on the substrate in the input region; a well region, doped with first-type ions, in the plurality of fins and in the substrate; an epitaxial layer on each fin in the input region; a drain region, doped with second-type ions, in a top portion of each fin and in the epitaxial layer; an extended drain region, doped with the second-type ions, in a bottom portion of each fin to connect to the drain region and in a portion of the substrate, in the input region; and a counter-doped region, doped with the first-type ions, in a portion of the substrate between two adjacent fins to insulate adjacent extended drain regions, wherein a PN junction is formed between the counter-doped region and the extended drain region. ### Claim 2 (depends on 1) The device according to claim 1, further comprising an insulating layer formed on the substrate, the insulating layer covering a portion of a sidewall of a fin, a top surface of the insulating layer being lower than the top surfaces of the plurality of fins. ### Claim 3 (depends on 2) The device according to claim 2, further comprising at least two grounding regions for grounding the ESD protection device, a plurality of fins being formed on the substrate in the grounding region. ### Claim 4 (depends on 3) The device according to claim 3, wherein a first portion of a fin in the input region is connected to a second portion of the fin in the grounding region through a fin portion, and a gate structure is formed on a plurality of fin portions between the input region and the grounding region, the gate structure covering a top surface and a portion of a sidewall of fin portions. ### Claim 5 (depends on 4) The device according to claim 4, further comprising a source region formed in each fin in a grounding region and the source regions is doped with first-type ions or second-type ions. ### Claim 6 (depends on 5) The device according to claim 5, wherein when the source region is doped with the first-type ions, one grounding region is located at one of two sides of the input region. ### Claim 7 (depends on 2) The device according to claim 2, wherein fins in the input region are separated from fins in a grounding region. ### Claim 8 (depends on 7) The device according to claim 7, further comprising a source region formed in each fin in a grounding region. ### Claim 9 (depends on 8) The device according to claim 8, wherein when the source region is doped with the first-type ions, one grounding region is located at one of two sides of the input region. ### Claim 10 (depends on 3) The device according to claim 3, further comprising: an amorphous layer formed on the epitaxial layer, the amorphous layer being made of an amorphous material. ### Claim 11 (depends on 10) The device according to claim 10, wherein germanium ions are implanted into the epitaxial layer to form amorphous layer. ### Claim 12 (depends on 1) The device according to claim 1, wherein the first-type ions are P-type ions and the second-type ions are N-type ions. ### Claim 13 (depends on 12) The device according to claim 12, wherein the first-type ions are boron ions and the second-type ions are phosphorous ions. ### Claim 14 (depends on 1) The device according to claim 1, wherein the epitaxial layer is made of one or more of silicon and silicon phosphide. ### Claim 15 An electrostatic discharge (ESD) protection device, comprising: a substrate including an input region; a plurality of fins on the substrate in the input region; an insulating layer on the substrate, the insulating layer covering a portion of a sidewall of a fin, a top surface of the insulating layer being lower than the top surfaces of the plurality of fins; a well region, doped with first-type ions, in the plurality of fins and in the substrate; an epitaxial layer on each fin in the input region; a drain region, doped with second-type ions, in a top portion of each fin and in the epitaxial layer; an extended drain region, doped with the second-type ions, in a bottom portion of each fin to connect to the drain region and in a portion of the substrate, in the input region; and a counter-doped region, doped with the first-type ions, in a portion of the substrate between two adjacent fins to insulate adjacent extended drain regions, wherein the counter-doped region is formed on the well region and in a surface portion of the substrate between two adjacent fins to insulate adjacent extended drain regions.