Semiconductor package structure with twinned copper

A semiconductor package structure, comprising:

• a chip structure;
• a molding layer surrounding the chip structure;
• a conductive via structure passing through the molding layer;
• and
• a redistribution structure over the conductive via structure and the molding layer, wherein the redistribution structure is connected to the conductive via structure and comprises:
• a first transition layer;
• a first conductive layer over the first transition layer, wherein the first conductive layer is substantially made of twinned copper;
• and
• a second conductive layer over the first conductive layer, wherein the second conductive layer is substantially made of twinned copper, and an average volume percentage of the twinned copper in the first conductive layer is greater than an average volume percentage of the twinned copper in the second conductive layer.

A semiconductor package structure, comprising:

• a chip structure;
• and
• a conductive structure over the chip structure, wherein the conductive structure is electrically connected to the chip structure and comprises:
• a transition layer over the chip structure, wherein the transition layer comprises twinned copper;
• and
• a first conductive layer on the transition layer, wherein the first conductive layer is substantially made of twinned copper, and an average volume percentage of the twinned copper in the first conductive layer is greater than an average volume percentage of the twinned copper in the transition layer.