Semiconductor device and method of manufacturing semiconductor device

A semiconductor device comprising:

• a first chip including a first substrate, a first metal wire, a first bonding structure, and a first interlayer insulating film, wherein the first metal wire and the first interlayer insulating film are formed on a front surface of the first substrate, and the first bonding structure includes a first through portion that passes through the first metal wire and a first bonding portion that is formed in the first substrate and exposed to an exterior of the first chip through a rear surface of the first substrate;
• and
• a second chip, bonded to the first chip, including a second substrate, a second metal wire, a second bonding structure, and a second interlayer insulating film, wherein the second metal wire and the second interlayer insulating film are formed on a front surface of the second substrate, and the second bonding structure includes a second through portion that passes through the second metal wire and a second bonding portion that is formed in the second substrate and exposed to an exterior of the second chip through a rear surface of the second substrate,
• wherein the rear surface of the first substrate and the second interlayer insulating film are bonded to each other at a bonding interface between the first chip and the second chip, and the first bonding portion is directly bonded to the second through portion.

A semiconductor device comprising:

• a first chip including a first substrate, a first cell array, a first interlayer insulating film, and a first bonding structure, wherein the first bonding structure includes a first bonding portion formed in the first substrate and a first through portion passing through the first interlayer insulating film and coupled to the first bonding portion as a single layer;
• and
• a second chip, bonded to the first chip, including a second substrate, a second cell array, a second interlayer insulating film, and a second bonding structure, wherein the second bonding structure includes a second bonding portion formed in the second substrate and a second through portion passing through the second interlayer insulating film and coupled to the second bonding portion as a single layer,
• wherein the first bonding portion of the first chip is bonded to the second through portion of the second chip.