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US 11,114,402 B2Granted
Semiconductor device with backmetal and related methods
AssigneeSemiconductor Components Industries, LLC
InventorsMichael J. Seddon, Takashi Noma, Kazuo Okada, Hideaki Yoshimi, Naoyuki Yomoda, Yusheng Lin
Life of this patent
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Abstract
Implementations of semiconductor devices may include a die having a first side and a second side, a contact pad coupled to the first side of the die, and a metal layer coupled to the second side of the die. A thickness of the die may be no more than four times a thickness of the metal layer.
Claims13
A method for forming a semiconductor device comprising:
- forming a plurality of contact pads coupled to a first side of a wafer;
- forming a recess in a second side of the wafer opposite the first side of the wafer through backgrinding the wafer;
- forming a metal layer within the recess;
- patterning the metal layer within the recess;
- coupling a mold compound with the metal layer within the recess;
- removing a portion of the wafer until the portion of the wafer is coplanar with a plane formed by a portion of the mold compound;
- and
- singulating the wafer into a plurality of semiconductor devices.
5 more elements
A method for forming a semiconductor device comprising:
- forming a plurality of contact pads coupled to a first side of a wafer;
- forming a recess in a second side of the wafer opposite the first side through backgrinding the second side of the wafer;
- forming a metal layer within the recess;
- forming a plurality of openings with this in the metal layer;
- forming a mold compound into the plurality of openings of the metal layer;
- removing a portion of the wafer until the portion of the wafer is coplanar with a plane formed by a portion of the mold compound;
- and
- singulating the wafer into a plurality of semiconductor devices.
5 more elements
Dependencies are inferred from the claim text.