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US 11,114,384 B2Granted
Oxide-peeling stopper
AssigneeInfineon Technologies Austria AG
InventorsOliver Blank, Christof Altstaetter, Ingmar Neumann, Rudolf Rothmaler
Life of this patent
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Abstract
A power semiconductor die has a semiconductor body, an insulation layer on the semiconductor body, a passivation structure arranged above the insulation layer so as to expose a first insulation layer subsection that extends to an edge of the power semiconductor die, and an interruption structure in the first insulation layer subsection.
Claims19
A power semiconductor die, comprising:
- a semiconductor body;
- an insulation layer on the semiconductor body;
- a passivation structure arranged above the insulation layer so as to expose a first insulation layer subsection of the insulation layer that extends to an edge of the power semiconductor die;
- an interruption structure in the first insulation layer subsection;
- a plurality of trenches, wherein each of the trenches includes a trench electrode that is insulated from the semiconductor body by a trench insulator;
- and
- a plurality of contact plugs for contacting the trench electrodes and/or the semiconductor body, wherein each of the contact plugs extends from the upper surface of the insulation layer to the lower surface of the insulation layer.
4 more elements
A semiconductor wafer, comprising:
- a semiconductor body;
- an insulation layer on the semiconductor body;
- a die region with a power semiconductor die;
- a dicing region arranged adjacent to the die region;
- a passivation structure arranged above the insulation layer so as to expose a section of the insulation layer, wherein a first subsection of the exposed insulation layer section extends into the die region and wherein a second subsection of the exposed insulation layer section extends into the dicing region;
- an interruption structure in the first insulation layer subsection;
- and
- a plurality of trenches, wherein each of the trenches includes a trench electrode that is insulated from the semiconductor body by a trench insulator, wherein a first subset of the plurality of trenches is arranged in the die region and includes at least one trench laterally overlapping the first insulation layer subsection, wherein a second subset of the plurality of trenches is arranged in the dicing region, and wherein each of the second subset of the plurality of trenches laterally overlaps with the second insulation layer subsection.
5 more elements
Dependencies are inferred from the claim text.