US 11,114,377 B2 · Transformer, transformer manufacturing method and semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate, an insulating layer, a transformer formed in the insulating layer, and a wiring. The transformer includes a primary winding conductor, and a secondary winding conductor. The primary winding conductor is provided in a quadrangle spiral shape having a first center axis extending in a direction parallel to the surface of the semiconductor substrate inside the insulating layer, and configured by one conductor film selected from a group consisting of a vacuum deposition film, a chemical vapor deposition film and a sputtered film. The secondary winding conductor is provided in a quadrangle spiral shape having a second center axis inside the insulating layer while being spaced from the primary winding conductor in plan view of the semiconductor substrate, magnetically coupled with the primary winding conductor and configured by a conductor film.

A transformer manufacturing method comprising the steps of:

laminating a lower insulating layer on a surface of a semiconductor substrate;
laminating a first conductor film on the lower insulating layer by a vacuum deposition method, a chemical vapor deposition method or sputtering;
subjecting the first conductor film to patterning to form a first lower linear conductor and a second lower linear conductor that are arranged side by side so as to be spaced from each other in plan view of the semiconductor substrate, and to form a third lower linear conductor and a fourth lower linear conductor that are arranged side by side so as to be spaced from each other in plan view of the semiconductor substrate;
laminating an upper insulating layer on the lower insulating layer in which the first through fourth lower linear conductors are formed;
providing a plurality of contact vias penetrating through the upper insulating layer so that the plurality of contact vias reach a first end and a second end of the first lower linear conductor, a third end and a fourth end of the second lower linear conductor, a fifth end and a sixth end of the third lower linear conductor, and a seventh end and an eighth end of the fourth lower linear conductor, the first end being adjacent to the third end, the second end being adjacent to the fourth end, the fifth end being adjacent to the seventh end, and the sixth end being adjacent to the eighth end;
laminating a second conductor film on the upper insulating layer by the vacuum deposition method, the chemical vapor deposition method or the sputtering;
and
subjecting the second conductor film to patterning to form a first upper linear conductor, a second upper linear conductor, a third upper linear conductor, and a fourth upper linear conductor so that the first through fourth upper linear conductors are in contact with the plurality of contact vias, wherein
the first upper linear conductor is formed so as to connect a first contact via positioned at the first end of the first lower linear conductor to a second contact via positioned at the fourth end of the second lower linear conductor,
the second upper linear conductor is formed so as to connect with a third contact via positioned at the second end of the first lower linear conductor,
the third upper linear conductor is formed so as to connect a fourth contact via positioned at the fifth end of the third lower linear conductor to a fifth contact via positioned at the eighth end of the fourth lower linear conductor,
the fourth upper linear conductor is formed so as to connect with a sixth contact via positioned at the sixth end of the third lower linear conductor,
the first lower linear conductor, the second lower linear conductor, the first upper linear conductor and the second upper linear conductor are connected to one another via the plurality of contact vias, thereby forming a first winding conductor having a first center axis,
the third lower linear conductor, the fourth lower linear conductor, the third upper linear conductor and the fourth upper linear conductor are connected to one another via the plurality of contact vias, thereby forming a second winding conductor having a second center axis,
each of the first and second winding conductors have a quadrangle spiral shape having a respective center axis extending in a direction parallel to the surface of the semiconductor substrate,
the first and second winding conductors are spaced from one another and are magnetically coupled to each other, and
the second winding conductor encircles the first center axis and the first winding conductor encircles the second center axis, the second center axis being offset from the first center axis in a direction perpendicular to the first center axis.

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Transformer, transformer manufacturing method and semiconductor device

Life of this patent

Transformer, transformer manufacturing method and semiconductor device

Life of this patent

Abstract

Claims15