Graphene enabled selective barrier layer formation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Yi Yang, Guanyu Luo, Chin-Lung Chung, Ming-Han Lee, Shau-Lin Shue
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Abstract
Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a graphene layer between the second contact feature and the first contact feature.
Claims20
An interconnect structure comprising:
- a first contact feature in a first dielectric layer;
- a second dielectric layer over the first dielectric layer;
- a second contact feature over the first contact feature;
- a barrier layer between the second dielectric layer and the second contact feature;
- and
- a carbon layer disposed between the second contact feature and the first contact feature, the carbon layer being in contact with the second contact feature,
- wherein the barrier layer terminates over a top surface of the carbon layer and does not extend between the second contact feature and the carbon layer.
An interconnect structure comprising:
- a first contact feature in a first dielectric layer;
- a second dielectric layer over the first dielectric layer;
- a contact via over the first contact feature and surrounded by the second dielectric layer;
- a second contact feature over the contact via and surrounded by the second dielectric layer;
- a barrier layer between the second dielectric layer and the second contact feature;
- and
- a graphene layer disposed between the contact via and the second contact feature, the graphene layer being in contact with the second contact feature,
- wherein the barrier layer terminates over a top surface of the graphene layer and does not extend between the contact via and the second contact feature.
A contact structure, comprising:
- a first contact feature in a first dielectric layer;
- an etch stop layer over the first dielectric layer;
- a graphene layer disposed over the first contact feature;
- a catalytic metal layer disposed between the graphene layer and the first contact feature, a composition of the catalytic metal layer being different from a composition of the first contact feature;
- a second dielectric layer over the etch stop layer;
- a second contact feature over the graphene layer and disposed in the second dielectric layer;
- and
- a barrier layer between the second dielectric layer and the second contact feature.
Dependencies are inferred from the claim text.