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US 11,114,369 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeAmkor Technology Singapore Holding Pte. Ltd.
InventorsWon Bae Bang, Kwang Seok Oh
Life of this patent
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Abstract
A thin semiconductor device with enhanced edge protection, and a method of manufacturing thereof. For example and without limitation, various aspects of this disclosure provide a thin semiconductor device comprising a substrate with an edge-protection region, and a method of manufacturing thereof.
Claims20
A semiconductor device, comprising:
- a substrate comprising:
- a dielectric layer comprising:
- a dielectric layer top side;
- a dielectric layer bottom side opposite the dielectric layer top side;
- and
- dielectric layer outermost sides that extend between the dielectric layer top side and the dielectric layer bottom side, the dielectric layer outermost sides defining a periphery of the dielectric layer;
- a conductive pattern along the dielectric layer top side;
- and
- a conductive edge structure at the periphery of the dielectric layer;
- and
- a semiconductor die coupled to the conductive pattern, wherein:
- the conductive edge structure comprises a lower conductive layer and an upper conductive layer in contact with the lower conductive layer;
- the upper conductive layer comprises an upper conductive layer outermost side that provides a first portion of a substrate outermost side of a periphery of the substrate;
- the upper conductive layer extends a first distance from a first dielectric layer outermost side of the dielectric layer outermost sides;
- the upper conductive layer comprises an upper conductive layer top side that provides a first portion of a substrate top side;
- the lower conductive layer comprises a lower conductive layer outermost side that provides a second portion of the substrate outermost side;
- the lower conductive layer extends a second distance from the first dielectric layer outermost side;
- the lower conductive layer comprises a lower conductive layer bottom side that provides a first portion of a substrate bottom side;
- and
- the second distance is different from the first distance.
17 more elements
A semiconductor device comprising:
- a substrate comprising:
- a substrate top side;
- a substrate bottom side opposite the substrate top side;
- substrate outermost sides that extend between the substrate top side and the substrate bottom side, the substrate outermost sides defining a periphery of the substrate;
- a conductive pattern at the substrate top side;
- and
- a conductive edge structure comprising conductive layers at the periphery of the substrate, the conductive edge structure comprising an edge structure top side that provides a portion of the substrate top side and an edge structure bottom side that provides a portion of the substrate bottom side;
- and
- a semiconductor die coupled to the substrate top side;
- wherein each conductive layer of the conductive edge structure extends inwardly from the periphery of the substrate in a direction parallel to the substrate top side;
- wherein each conductive layer of the conductive edge structure comprises:
- an innermost surface that is proximal a dielectric material of the substrate;
- and
- an outermost surface that provides an outermost surface portion of a first outermost side of the substrate outermost sides;
- and
- wherein the innermost surfaces of the conductive layers adjoin a step-shaped interface of the dielectric material.
13 more elements
A method of making a semiconductor device, the method comprising:
- providing a substrate comprising:
- a substrate first side, a substrate second side opposite the substrate first side, and substrate outermost sides extending between the substrate first side and the substrate second side, the substrate outermost sides defining a periphery of the substrate;
- a conductive pattern at the substrate first side;
- a dielectric layer comprising dielectric layer outermost surfaces that provide a periphery of the dielectric layer;
- and
- an edge pattern at a first substrate outermost side of the substrate outermost sides, wherein:
- the edge pattern comprises conductive layers at the first substrate outermost side and positioned outwardly from a first dielectric layer outermost surface of the dielectric layer outermost surfaces;
- a first conductive layer of the conductive layers comprises a first edge portion, wherein the first edge portion provides a portion of the substrate first side and provides a first portion of a first substrate outermost side of the substrate outermost sides, and wherein the first edge portion has a first lateral width directed outwardly from the first dielectric layer outermost surface;
- and
- a second conductive layer of the conductive layers comprises a second edge portion, wherein the second edge portion provides a portion of the substrate second side and provides a second portion of the first substrate outermost side, wherein the second edge portion has a second lateral width directed outwardly from the first outermost dielectric layer surface, and wherein the second lateral width is different than the first lateral width;
- and
- attaching a semiconductor die to the substrate first side.
9 more elements
Dependencies are inferred from the claim text.