# US 11,114,355 B2 · Power module and method for manufacturing power module

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- Number: US 11,114,355 B2
- Document ID: US11114355B2
- Status: Granted
- Kind: B2
- Application number: 16/541,206
- Filed: 2019-08-15
- Published: 2019-12-05
- Granted: 2021-09-07
- Earliest claimed: 2017-03-29
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Takahiro Hayakawa; Yasutaka Sugimoto; Tomoki Kato; Yoichi Moriya
- Web page: https://patentgrep.com/patent/US11114355B2

## CPC

- H10W 70/692: Ceramics or glasses
- C04B 41/5059: {Silicon carbide}
- C04B 41/5066: {Silicon nitride}
- C04B 41/87: Ceramics
- F28F 21/04: of ceramic; of concrete; of natural stone
- H05K 1/0201: {Thermal arrangements, e.g. for cooling, heating or preventing overheating}
- H05K 1/0306: {Inorganic insulating substrates, e.g. ceramic, glass}
- H05K 3/4629: {laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets}
- H10W 40/037: {Assembling together parts thereof}
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/68: Shapes or dispositions thereof
- H10W 70/685: comprising multiple insulating layers
- H10W 72/30: Die-attach connectors
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 90/00: Package configurations
- H10W 70/682: {comprising holes having chips therein}
- H10W 72/01515: {Forming coatings}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07331: {Connecting techniques}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/075: {of bond wires}
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- F28F: DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION (water and air traps, air venting F16)
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

A power module includes a power wiring line provided with a power element, a glass ceramic multilayer substrate provided with a control element to control the power element, and a highly heat-conductive ceramic substrate made of a ceramic material having higher thermal conductivity than a glass ceramic contained in the glass ceramic multilayer substrate. The power wiring line is disposed on the highly heat-conductive ceramic substrate, and the glass ceramic multilayer substrate is disposed directly on the highly heat-conductive ceramic substrate.

## Claims

### Claim 1

A power module comprising:
a power wiring line provided with a power element;
a glass ceramic multilayer substrate provided with a control element to control the power element; and
a highly heat-conductive ceramic substrate made of a ceramic material having higher thermal conductivity than a glass ceramic contained in the glass ceramic multilayer substrate; wherein
the power wiring line is disposed at a same or substantially a same position in a thickness direction of the glass ceramic multilayer substrate as at least one layer of the glass ceramic multilayer substrate;
the power element is bonded to a first surface of the power wiring line; and
the glass ceramic multilayer substrate and the power wiring line are each disposed directly on a surface of the highly heat-conductive ceramic substrate such that a second surface of the power wiring line is at an interface between the highly heat-conductive ceramic substrate and the glass ceramic multilayer substrate.

### Claim 2 (depends on 1)

The power module according to claim 1, wherein a glass ceramic component contained in the glass ceramic multilayer substrate diffuses into the highly heat-conductive ceramic substrate.

### Claim 3 (depends on 1)

The power module according to claim 1, wherein a thermal capacity of the highly heat-conductive ceramic substrate is greater than a thermal capacity of the power wiring line.

### Claim 4 (depends on 3)

The power module according to claim 3, wherein a total volume of the highly heat-conductive ceramic substrate is greater than a total volume of the power wiring line.

### Claim 5 (depends on 1)

The power module according to claim 1, wherein a total thickness of the glass ceramic multilayer substrate is greater than a total thickness of the power wiring line.

### Claim 6 (depends on 1)

The power module according to claim 1, wherein the thermal conductivity of the ceramic material defining the highly heat-conductive ceramic substrate is about 3 times or more a thermal conductivity of the glass ceramic contained in the glass ceramic multilayer substrate.

### Claim 7 (depends on 6)

The power module according to claim 6, wherein the thermal conductivity of the ceramic material defining the highly heat-conductive ceramic substrate is about 15 W·m−1·K−1 or more, and the thermal conductivity of the glass ceramic contained in the glass ceramic multilayer substrate is about 5 W·m−1·K−1 or less.

### Claim 8 (depends on 1)

The power module according to claim 1, wherein
the power element is disposed on the first surface of the power wiring line which is opposite to the second surface of the power wiring line provided with the highly heat-conductive ceramic substrate;
the control element is disposed on a surface of the glass ceramic multilayer substrate opposite to a surface of the glass ceramic multilayer substrate provided with the highly heat-conductive ceramic substrate; and
a total thickness of the glass ceramic multilayer substrate is greater than a sum of a total thickness of the power wiring line in a thickness direction of the highly heat-conductive ceramic substrate and a total height of the power element.

### Claim 9 (depends on 8)

The power module according to claim 8, wherein the glass ceramic multilayer substrate is interposed between the power element and the control element.

### Claim 10 (depends on 8)

The power module according to claim 8, wherein inner electrode layers electrically connected to the control element are disposed inside the glass ceramic multilayer substrate, and the inner electrode layers are disposed at the heights greater than the total height of the power wiring line in the thickness direction of the highly heat-conductive ceramic substrate.

### Claim 11 (depends on 8)

The power module according to claim 8, wherein a plurality of the power elements including a first power element and a second power element are disposed on the power wiring line, and a partition containing a same material as the glass ceramic contained in the glass ceramic multilayer substrate is disposed between the first power element and the second power element.

### Claim 12 (depends on 8)

The power module according to claim 8, wherein a portion of the glass ceramic multilayer substrate is also disposed as a portion that covers the power wiring line peripheral edge portion.

### Claim 13 (depends on 8)

The power module according to claim 8, wherein a power-element disposition space is filled with a sealing resin, and the power element is sealed by the sealing resin.

### Claim 14 (depends on 1)

The power module according to claim 1, wherein a difference in an average thermal expansion coefficient between the highly heat-conductive ceramic substrate and the glass ceramic multilayer substrate at about 30° C. to about 300° C. is about 3.5 ppm·K−1 or less.

### Claim 15 (depends on 1)

The power module according to claim 1, wherein the power wiring line contains silver or copper, and the ceramic material defining the highly heat-conductive ceramic substrate contains silicon nitride, aluminum nitride, alumina, or silicon carbide.

### Claim 16 (depends on 15)

The power module according to claim 15, wherein the power wiring line contains about 98% by weight or more of silver or copper.

### Claim 17 (depends on 15)

The power module according to claim 15, wherein the thickness of the power wiring line is about 0.04 mm or more.

### Claim 18 (depends on 15)

The power module according to claim 15, wherein the glass ceramic multilayer substrate contains a SiO2—CaO—Al2O3—B2O3-based glass ceramic or a SiO2—MgO—Al2O3—B2O3-based glass ceramic.

### Claim 19 (depends on 15)

The power module according to claim 15, wherein the power element is made of a wide band gap semiconductor.

### Claim 20 (depends on 19)

The power module according to claim 19, wherein the wide band gap semiconductor is silicon carbide or gallium nitride.