Dummy element and method of examining defect of resistive element

A method of examining a defect of a resistive element of a target, using a dummy element including a lower insulating film deposited on a semiconductor substrate, a first resistive layer deposited on the lower insulating film, an interlayer insulating film covering the first resistive layer, a first pad-forming electrode deposited on the interlayer insulating film and having a contact portion in direct contact with the first resistive layer and an extending portion to be in Schottky contact with the semiconductor substrate so as to cause a short circuit between the first pad-forming electrode and the semiconductor substrate to simulate a Schottky contact state, a relay wire connected to the first resistive layer and connected to the semiconductor substrate with an ohmic contact, and a counter electrode allocated under the semiconductor substrate, the method comprising:

• measuring an electrical characteristic between the first pad-forming electrode and the counter electrode, to obtain a first measurement result;
• measuring an electrical characteristic of the resistive element of the target, to obtain a second measurement result;
• and
• detecting whether a defect exists with respect to at least one of a corresponding lower insulating film of the resistive element and a corresponding interlayer insulating film of the resistive element, based on the first measurement result and the second measurement result.

A dummy element for simulating a defective state of a resistive element of a target to be examined, the dummy element comprising:

• a semiconductor substrate;
• a lower insulating film deposited on the semiconductor substrate;
• a first resistive layer deposited on the lower insulating film;
• a second resistive layer deposited on the lower insulating film;
• an interlayer insulating film covering the first resistive layer and the second resistive layer;
• a first pad-forming electrode deposited on the interlayer insulating film so as to be connected to the first resistive layer, and including an extending portion in Schottky contact with the semiconductor substrate so as to cause a short circuit between the first pad-forming electrode and the semiconductor substrate to simulate a Schottky contact state;
• a second pad-forming electrode deposited on the interlayer insulating film so as to be connected to another side of the relay wire and the second resistive layer, and including an extending portion to be in Schottky contact with the semiconductor substrate so as to cause a short circuit between the second pad-forming electrode and the semiconductor substrate to simulate the Schottky contact state;
• a relay wire connected on one side to the first resistive layer and connected to the semiconductor substrate with an ohmic contact;
• and
• a counter electrode allocated under the semiconductor substrate,
• wherein
• the Schottky contact state corresponds to a state in which a corresponding lower insulating film of the resistive element and a corresponding interlayer insulating film of the resistive element are defective.