# US 11,114,348 B2 · Hybrid high-voltage low-voltage FinFET device

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- Number: US 11,114,348 B2
- Document ID: US11114348B2
- Status: Granted
- Kind: B2
- Application number: 16/177,715
- Filed: 2018-11-01
- Published: 2019-06-06
- Granted: 2021-09-07
- Earliest claimed: 2017-12-04
- Assignees: Microsemi SoC Corporation
- Applicants: Microsemi SoC Corp.
- Inventors: John McCollum; Fethi Dhaoui; Pavan Singaraju
- Web page: https://patentgrep.com/patent/US11114348B2

## CPC

- H10D 86/011: {comprising FinFETs}
- H10B 10/12: {comprising a MOSFET load element}
- H10B 10/125: {the MOSFET being a thin film transistor [TFT]}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 84/0128: {Manufacturing their channels}
- H10D 84/0144: {Manufacturing their gate insulating layers}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/834: {comprising FinFETs}
- H10D 86/215: {comprising FinFETs}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 34/00: Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/853: {comprising FinFETs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An integrated circuit includes a plurality of low-voltage FinFET transistors each having a channel length l and a channel width w, the low-voltage FinFET transistors having a first threshold voltage channel implant and a first gate dielectric thickness. The integrated circuit also includes a plurality of high-voltage FinFET transistors each having the channel length l and the channel width w, the high-voltage FinFET transistors having a second threshold voltage channel implant greater than the first threshold voltage channel implant and second gate dielectric thickness greater than the first gate dielectric thickness.

## Claims

### Claim 1

An integrated circuit including a plurality of low-voltage FinFET transistors formed on a substrate, each low-voltage FinFET transistor including a first gate dielectric having a plurality of layers, the plurality of layers including a first dielectric layer formed from a first dielectric material having a first thickness and a second dielectric layer formed from a second dielectric material different from the first dielectric material and having a second thickness, the second dielectric material being a high-k dielectric material and overlying the first dielectric layer, the integrated circuit comprising:
a plurality of hybrid FinFET transistors, each hybrid FinFET transistor formed on the substrate and including:
a respective fin extending upward from the substrate;
a second gate dielectric surrounding a portion of the fin, the second gate dielectric having a greater thickness than the thickness of the first gate dielectric layer in each of the plurality of low-voltage FinFET transistors, the second gate dielectric including a first layer formed from the first dielectric material having a third thickness, a second layer formed from the first dielectric material overlying the first layer of the first dielectric material that is the same layer as the first dielectric layer in the first gate and having the first thickness, and a third layer formed from the second dielectric material overlying the second layer of the first dielectric material that is the same layer as the high-k material second dielectric layer in the first gate and having the second thickness;
a gate electrode disposed over the second gate dielectric and surrounding a portion of the fin, a channel in the respective fin defined by a portion of the fin disposed surrounded by the gate electrode;
portions of the respective fin extending past opposite edges of the gate electrode forming source and drain regions,
the channel in the respective fin formed by:
performing a low-voltage threshold implant in the channel regions of both the low-voltage FinFET transistors and the hybrid FinFET transistors; and
performing an additional implant in the channel region of each of the hybrid FinFET transistors.

### Claim 2 (depends on 1)

The integrated circuit of claim 1 wherein the plurality of low-voltage FinFET transistors are n-channel FinFET transistors and the plurality of hybrid FinFET transistors are n-channel FinFET transistors.

### Claim 3 (depends on 1)

The integrated circuit of claim 1 wherein the plurality of low-voltage FinFET transistors are p-channel FinFET transistors and the plurality of hybrid FinFET transistors are p-channel FinFET transistors.

### Claim 4 (depends on 1)

The integrated circuit of claim 1 wherein the plurality of low-voltage FinFET transistors include both n-channel FinFET transistors and p-channel FinFET transistors and the plurality of hybrid FinFET transistors include both n-channel FinFET transistors and p-channel FinFET transistors.

### Claim 5 (depends on 1)

The integrated circuit of claim 1 wherein the first dielectric material is SiO2 and the second dielectric material is HfO2.

### Claim 6 (depends on 1)

The integrated circuit of claim 1 wherein the doping level of each of the plurality of low-voltage FinFET transistors is about 3e18 atoms/cm2 and the doping level of each of the hybrid FinFET transistors is about 5e18 atoms/cm2.

### Claim 7

An integrated circuit including a plurality of low-voltage FinFET transistors, each low-voltage FinFET transistor including a first gate dielectric having a plurality of layers, the plurality of layers including a first dielectric layer formed from a first dielectric material having a first thickness and a second dielectric layer formed from a second dielectric material different from the first dielectric material and having a second thickness, the second dielectric material being a high-k material and overlying the first dielectric layer, the integrated circuit comprising:
a plurality of hybrid FinFET transistors, each hybrid FinFET transistor formed on a substrate and including:
a respective fin extending upward from the substrate;
a second gate dielectric surrounding a portion of the respective fin, the second gate dielectric having a greater thickness than the thickness of the first gate dielectric in each of the plurality of low-voltage FinFET transistors, the second gate dielectric including a first layer formed from the first dielectric material having a third thickness, a second layer formed from the first dielectric material overlying the first layer of the first dielectric material that is the same layer as the first dielectric layer in the first gate and having the first thickness, and a third layer formed from the second dielectric material overlying the second layer of the first dielectric material that is the same layer as the high-k material second dielectric layer in the first gate and having the second thickness;
a gate electrode disposed over the second gate dielectric and surrounding a portion of the respective fin;
portions of the respective fin extending past opposite edges of the gate electrode forming source and drain regions;
a channel that extends between the source region and the drain region, the channel defined as a portion of the respective fin between the source region and the drain region that is surrounded by the gate electrode, the channel having a channel length that is the same as a channel length of each of the plurality of low-voltage FinFET transistors, having a channel width that is the same as a channel width of each of the plurality of low-voltage FinFET transistors and having a doping level that is greater than a doping level of each of the plurality of low-voltage FinFET transistors.

### Claim 8 (depends on 7)

The integrated circuit of claim 7 wherein the plurality of low-voltage FinFET transistors are n-channel FinFET transistors and the plurality of hybrid FinFET transistors are n-channel FinFET transistors.

### Claim 9 (depends on 7)

The integrated circuit of claim 7 wherein the plurality of low-voltage FinFET transistors are p-channel FinFET transistors and the plurality of hybrid FinFET transistors are p-channel FinFET transistors.

### Claim 10 (depends on 7)

The integrated circuit of claim 7 wherein the plurality of low-voltage FinFET transistors include both n-channel FinFET transistors and p-channel FinFET transistors and the plurality of hybrid FinFET transistors include both n-channel FinFET transistors an p-channel FinFET transistors.

### Claim 11 (depends on 7)

The integrated circuit of claim 7 wherein the first dielectric material is SiO2 and the second dielectric material is HfO2.

### Claim 12 (depends on 7)

The integrated circuit of claim 7 wherein the doping level of each of the plurality of low-voltage FinFET transistors is about 3e18 atoms/cm2 and the doping level of each of the hybrid FinFET transistors is about 5e18 atoms/cm2.