Partial backside metal removal singulation system and related methods
AssigneeSemiconductor Components Industries, LLC
InventorMichael J. Seddon
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Abstract
Implementations of methods of singulating a plurality of die included in a substrate may include forming a plurality of die on a first side of a substrate, forming a backside metal layer on a second side of a substrate, forming a groove only partially through a thickness of the backside metal layer, and singulating the plurality of die included in the substrate through removing backmetal material in the die street and removing substrate material in the die street. The groove may be located in a die street of the substrate.
Claims20
A method of singulating a plurality of die comprised in a substrate, the method comprising:
- forming a plurality of die on a first side of a substrate;
- forming a backside metal layer on a second side of the substrate;
- forming a groove only partially through a thickness of the backside metal layer, wherein the groove is located in a die street of the substrate;
- and
- singulating the plurality of die comprised in the substrate through removing backmetal material in the die street and removing substrate material in the die street.
A method of singulating a plurality of die comprised in a substrate, the method comprising:
- forming a groove into a first thickness of a backside metal layer in a die street, the backside metal layer coupled to a substrate;
- etching the backside metal layer, wherein the etching exposes the substrate in the die street and thins the backside metal layer to a second thickness;
- and
- singulating a plurality of die comprised in the substrate through removing a substrate material in the die street.
A method of singulating a plurality of die comprised in a substrate, the method comprising:
- forming a plurality of die on a first side of a substrate;
- forming a backside metal layer on a second side of a substrate;
- forming a groove partially through a first thickness of the backside metal layer in a die street;
- etching the backside metal layer, wherein the etching exposes a portion of the substrate in the die street and thins the backside metal layer to a second thickness;
- and
- singulating the plurality of die comprised in the substrate through plasma etching at the portion of the substrate exposed by the etching.
Dependencies are inferred from the claim text.