Laser processing method
AssigneeDisco Corporation
InventorHiroshi Morikazu
Life of this patent
Estimating the term…
Abstract
A laser processing method for a substrate with a device formed on a front surface thereof and including an electrode pad, the method including: a laser beam applying step of applying the laser beam to the back surface of the substrate to form a fine hole in the substrate at a position corresponding to the electrode pad; a detecting step of detecting first plasma light emitted from the substrate at the same time that the fine hole is formed in the substrate by the laser beam applied thereto, and second plasma light emitted from the electrode pad; and a laser beam irradiation finishing step of stopping application of the laser beam when the second plasma light is detected in the detecting step. A peak power density of the laser beam to be applied is set in a range from 175 GW/cm2 or less to 100 GW/cm2 or more.
Claims5
A laser processing method for applying a laser beam to a back surface of a substrate with a device formed on a front surface thereof and including an electrode pad, to form a fine hole in the substrate that reaches the electrode pad, the method comprising:
- a laser beam applying step of applying the laser beam to the back surface of the substrate to form a fine hole in the substrate at a position corresponding to the electrode pad;
- a detecting step of detecting, through a first optical path, first plasma light having a first wavelength emitted from the substrate at the same time that the fine hole is formed in the substrate by the laser beam applied thereto;
- and, through a second optical path, second plasma light having a second wavelength different from the first wavelength emitted from the electrode pad;
- and
- a laser beam irradiation finishing step of stopping application of the laser beam when the second plasma light is detected in the detecting step,
- wherein, in the laser beam applying step, a peak power density of the laser beam to be applied is set in a range from 175 GW/cm2 or less to 100 GW/cm2 or more.
Dependencies are inferred from the claim text.