# US 11,114,340 B2 · Method for producing an interconnection comprising a via extending through a substrate

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 11,114,340 B2
- Document ID: US11114340B2
- Status: Granted
- Kind: B2
- Application number: 16/070,506
- Filed: 2017-01-16
- Published: 2021-07-01
- Granted: 2021-09-07
- Earliest claimed: 2016-01-19
- Applicants: Kobus SAS
- Inventors: Julien Vitiello; Fabien Piallat
- Web page: https://patentgrep.com/patent/US11114340B2

## CPC

- H10W 20/023: {the interconnections being through-semiconductor vias}
- C23C 16/34: Nitrides {(C23C16/303 takes precedence)}
- C23C 16/4405: {Cleaning of reactor or parts inside the reactor by using reactive gases}
- C23C 16/45523: {Pulsed gas flow or change of composition over time}
- C25D 3/38: of copper
- C25D 5/02: Electroplating of selected surface areas
- C25D 7/123: {Semiconductors first coated with a seed layer or a conductive layer}
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10W 20/0245: {comprising use of blind vias during the manufacture}
- H10W 20/039: {also covering sidewalls of the conductive structures}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The invention relates to a method for producing an interconnection comprising a via (V) extending through a substrate (1), said method successively comprising: (a) the deposition of a layer (11) of titanium nitride or tantalum nitride on a main surface (1A) of the substrate and on the inner surface (10A, 10B) of at least one hole (10) extending into at least part of the thickness of said substrate; (b) the deposition of a layer (12) of copper on said layer (11) of titanium nitride or tantalum nitride; and (c) the filling of the hole (10) with copper, said method being characterized in that, during step (a), the substrate (1) is arranged in a first deposition chamber (100), and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence, and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being dephased.

## Claims

### Claim 1

A method for producing an interconnection comprising a via extending through a substrate, said method comprising the following successive steps;
depositing a layer of titanium nitride or tantalum nitride on a main surface of the substrate and on the inner surface of the at least one hole extending into at least part of the thickness of substrate;
depositing a layer of copper on said layer of titanium nitride or tantalum nitride;
filling the hole with copper;
said method being characterized in that, during step (a), the substrate is arranged in a first deposition chamber, and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being out of phase, the pressure in the first deposition chamber being grater than 500 mTorr during the entire duration of step a), wherein the duration of a pulse in the first pulse sequence, respectively in the second pulse sequence, ranges from 0.02 s to 5 s; and the delay between two pulses in the first pulse sequence, respectively in the second pulse sequence, ranges from 0.02 s to 10 s, or from 0.5 s to 10 s.

### Claim 2

A method for producing an interconnection comprising a via extending through a substrate, said method comprising the following successive steps;
depositing a layer of titanium nitride or tantalum nitride on a main surface of the substrate and on the inner surface of at least one hole extending into at least part of the thickness of said substrate;
depositing a layer of copper on said layer of titanium nitride or tantalum nitride;
filling the hole with copper;
said method being characterized in that, during step (a), the substrate is arranged in a first deposition chamber, and in that said step (a) comprises the injunction of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being out of phase, the pressure in the first deposition chamber being greater than 500 mTorr during the entire duration of step a), after step (a), it includes cleaning the chamber in which the titanium nitride or tantalum nitride layer has been deposited to remove said titanium nitride or tantalum nitride deposited on an inner wall of said chamber, said cleaning being performed with a fluorine-containing reactive gas and activated by a plasma source.

### Claim 3

A method for producing an interconnection comprising a via extending through a substrate, said method comprising the following successive steps;
depositing a layer of titanium nitride or tantalum nitride on a main surface of the substrate and on the inner surface of at least one hole extending into at least part of the thickness of said substrate;
depositing a layer of copper on said layer of titanium nitride or tantalum nitride;
filling the hole with copper;
said method being characterized in that, during step (a), the substrate is arranged in a first deposition chamber, and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being out of phase, the pressure in the first deposition chamber being greater than 500 mTorr during the entire duration of step a), wherein after step (b), it includes cleaning the chamber in which the copper layer has been deposited to remove said copper deposited on an inner wall of said chamber, said cleaning including the following steps:
copper oxidation;
injection, according to a pulse sequence, of chemical species suitable for volatilizing said oxidized copper, said step (ii) beginning after the start of step (i).