Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device, the method comprising:

• forming a lower contact embedded in one or more first insulating layers;
• forming one or more second insulating layers over the lower contact;
• forming an opening in the one or more second insulating layers to at least partially expose the lower contact;
• forming a liner layer on an upper surface of an uppermost layer of the one or more second insulating layers, an inner side face of the second opening and on the exposed lower contact;
• removing the liner layer formed on the upper surface of the uppermost layer of the one or more second insulating layers and on the exposed lower contact and partially removing the liner layer formed on the inner side face of the second opening such that the liner layer remains on an upper portion of the second opening;
• and
• filling the second opening with a conductive material to form an upper contact in contact with the lower contact.

A method of manufacturing a semiconductor device, the method forming a source/drain structure over a substrate;

• forming a gate electrode adjacent to the source/drain structure;
• forming one or more first insulating layers over the source/drain structure and the gate electrode;
• forming a first opening in the one or more first insulating layers;
• filling the first opening by a first conductive material to form a first lower contact in contact with the first source/drain structure;
• forming one or more second insulating layers over the first lower contact;
• forming a second opening in the one or more second insulating layers to at least partially expose the first lower contact;
• forming a first liner layer on at least a part of an inner side face of the second opening;
• filling the second opening by a second conductive material to form a first upper contact in contact with the first lower contact without interposing the first liner layer;
• forming a third opening in the one or more first insulating layer and the one or more second insulating layer to at least partially expose the gate electrode;
• forming a second liner layer on an inner side face of the third opening and on the exposed gate electrode;
• and
• filling the third opening by a third conductive material to form a second upper contact in contact with the gate electrode with interposing the second liner layer.