# US 11,114,334 B2 · Semiconductor device with air gap and method for preparing the same

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- Number: US 11,114,334 B2
- Document ID: US11114334B2
- Status: Granted
- Kind: B2
- Application number: 16/561,562
- Filed: 2019-09-05
- Published: 2021-03-11
- Granted: 2021-09-07
- Earliest claimed: 2019-09-05
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Liang-Pin Chou
- Web page: https://patentgrep.com/patent/US11114334B2

## CPC

- H10W 20/46: comprising air gaps
- H10B 12/315: {with the capacitor higher than a bit line}
- H10B 12/482: {Bit lines}
- H10B 12/485: {Bit line contacts}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/063: {by forming conductive members before forming protective insulating material}
- H10W 20/0636: {the conductive members being on sidewalls}
- H10W 20/072: {of dielectric parts comprising air gaps}
- H10W 20/098: {by filling between adjacent conductive parts}
- H10W 20/43: Layouts of interconnections
- H10W 20/48: Insulating materials thereof
- H10B 12/34: {the transistor being at least partially in a trench in the substrate}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor device includes a first bit line and a second bit line disposed over a semiconductor substrate, and a dielectric structure disposed over a sidewall of the first bit line. The first bit line is between the second bit line and the dielectric structure, and the first bit line is separated from the second bit line by an air gap. A method for preparing a semiconductor device includes forming a first dielectric structure and a second dielectric structure over a semiconductor substrate, and forming a conductive material over the first and the second dielectric structures. The conductive material extends into a first opening between the first and the second dielectric structures. The method also includes partially removing the conductive material to form a first bit line and a second bit line in the first opening.

## Claims

### Claim 1

A semiconductor device, comprising:
a first bit line disposed over a semiconductor substrate;
a dielectric structure disposed over a sidewall of the first bit line;
a second bit line disposed over the semiconductor substrate, wherein the first bit line is between the second bit line and the dielectric structure, and the first bit line is separated from the second bit line by an air gap; and
a sealing dielectric layer disposed over the first bit line, the second bit line, the dielectric structure and the air gap;
wherein a top portion of the first bit line has a rounded corner, and a portion of the air gap extends between the sealing dielectric layer and the rounded corner of the first bit line.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric structure is in direct contact with the sidewall of the first bit line.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein a top surface of the first bit line is higher than a top surface of the air gap.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein a top surface of the dielectric structure is higher than a top surface of the air gap.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the sealing dielectric layer has a protruding portion sandwiched between the first bit line and the second bit line.

### Claim 6 (depends on 5)

The semiconductor device of claim 5, wherein the protruding portion of the sealing dielectric layer has a tip pointing toward the semiconductor substrate.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, further comprising:
a third bit line disposed over the semiconductor substrate, wherein the dielectric structure is sandwiched between the second bit line and the third bit line.

### Claim 8

A semiconductor device, comprising:
a first bit line and a second bit line disposed over a semiconductor substrate, wherein a first sidewall of the first bit line and a second sidewall of the second bit line are separated by an air gap;
a first dielectric structure disposed over a third sidewall of the first bit line, wherein the third sidewall is opposite to the first sidewall of the first bit line; and
a second dielectric structure disposed over a fourth sidewall of the second bit line, wherein the fourth sidewall is opposite to the second sidewall of the second bit line;
a sealing dielectric layer covering the first bit line, the second bit line and the air gap; and
a capacitor disposed over the sealing dielectric layer;
wherein a top portion of the first bit line has a rounded corner, and a portion of the air gap extends between the sealing dielectric layer and the rounded corner of the first bit line.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein an interface between the first bit line and the first dielectric structure has a first height, an interface between the first bit line and the air gap has a second height, and the first height is greater than the second height.

### Claim 10 (depends on 8)

The semiconductor device of claim 8, further comprising:
an active region defined by an isolation structure in the semiconductor substrate; and
a bit line contact disposed in the active region, wherein the first bit line is electrically connected to the active region by a bit line contact, and the bit line contact comprises a conductive layer and a metal silicide layer over the conductive layer.