Method for depositing and reflow of a high quality etch resistant gapfill dielectric film

A method, comprising:

• providing a device, comprising:
• a first layer having a plurality of mandrels formed thereon, wherein the mandrels are defined by a top surface and at least one sidewall;
• and
• a patterned spacer layer conformally deposited on the at least one sidewall of the mandrels to form gaps between respective facing portions of the patterned spacer layer formed on the sidewalls of the mandrels;
• filling the gaps with a dielectric material, wherein the dielectric material is a doped silicate glass selected from borophosphosilicate glass (BPSG), phosphosilicate glass (PSG), and borosilicate glass (BSG);
• thermally treating the dielectric material at a process pressure greater than 2 bar;
• maintaining a substrate temperature less than 500 degrees Celsius during thermally treating the dielectric material;
• and exposing the thermally treated dielectric material to a dry anneal process to eliminate moisture.

A method, comprising:

• forming a borophosphosilicate glass (BPSG) layer over a substrate by a chemical vapor deposition process;
• exposing the BPSG layer to steam at a pressure greater than 2 bar while maintaining a substrate temperature less than 500 degrees Celsius to enable reflow of the BPSG layer;
• exposing the BPSG layer to a dry anneal process to eliminate moisture;
• and
• planarizing a top surface of the BPSG layer by exposing the BPSG layer to a chemical mechanical polishing process to remove excess BPSG material from the BPSG layer.