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US 11,114,332 B2Granted
Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
AssigneeGlobalWafers Co., Ltd.
InventorSasha Joseph Kweskin
Life of this patent
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Abstract
A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.
Claims36
A method of preparing a multilayer structure, the method comprising:
- depositing a handle semiconductor nitride layer on a handle dielectric layer in interfacial contact with a front surface of a single crystal silicon handle substrate, wherein the single crystal silicon handle substrate comprises two major, generally parallel surfaces, one of which is the front surface of the single crystal silicon handle substrate and the other of which is a back surface of the single crystal silicon handle substrate, a circumferential edge joining the front surface and the back surface of the single crystal silicon handle substrate, a central plane between the front surface and the back surface of the single crystal silicon handle substrate, and a bulk region between the front and back surfaces of the single crystal silicon handle substrate and further wherein the handle dielectric layer comprises a reflowable insulating layer, the reflowable insulating layer comprising a silicate glass selected from the group consisting of phosphosilicate glass, borosilicate glass, borophosphosilicate glass, and any combination thereof;
- and
- bonding a donor dielectric layer in interfacial contact with a front surface of a single crystal semiconductor donor substrate to the handle semiconductor nitride layer to thereby form a bonded structure, wherein the single crystal semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the semiconductor donor substrate and the other of which is a back surface of the semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the semiconductor donor substrate, a central plane between the front and back surfaces of the semiconductor donor substrate, and a bulk region between the front and back surfaces of the semiconductor donor substrate, and further wherein the single crystal semiconductor donor substrate comprises a cleave plane.
A method of preparing a multilayer structure, the method comprising:
- depositing a donor semiconductor nitride layer on a donor dielectric layer in interfacial contact with a front surface of a single crystal semiconductor donor substrate, wherein the single crystal semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the semiconductor donor substrate and the other of which is a back surface of the semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the semiconductor donor substrate, a central plane between the front and back surfaces of the semiconductor donor substrate, and a bulk region between the front and back surfaces of the semiconductor donor substrate, and further wherein the single crystal semiconductor donor substrate comprises a cleave plane;
- and
- bonding the donor semiconductor nitride layer to a handle dielectric layer in interfacial contact with a front surface of a single crystal silicon handle substrate to thereby form a bonded structure, wherein the single crystal silicon handle substrate comprises two major, generally parallel surfaces, one of which is the front surface of the single crystal silicon handle substrate and the other of which is a back surface of the single crystal semiconductor handle substrate, a circumferential edge joining the front surface and the back surface of the single crystal silicon handle substrate, a central plane between the front surface and the back surface of the single crystal silicon handle substrate, and a bulk region between the front and back surfaces of the single crystal silicon handle substrate and further wherein the handle dielectric layer comprises a reflowable insulating layer, the reflowable insulating layer comprising a silicate glass selected from the group consisting of phosphosilicate glass, borosilicate glass, borophosphosilicate glass, and any combination thereof.
Dependencies are inferred from the claim text.