# US 11,114,328 B2 · Devices, systems and methods for electrostatic force enhanced semiconductor bonding

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- Number: US 11,114,328 B2
- Document ID: US11114328B2
- Status: Granted
- Kind: B2
- Application number: 16/206,895
- Filed: 2018-11-30
- Published: 2019-03-28
- Granted: 2021-09-07
- Earliest claimed: 2014-02-05
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Shu Qin; Ming Zhang
- Web page: https://patentgrep.com/patent/US11114328B2

## CPC

- H10P 72/722: {Details of electrostatic chucks}
- H10P 90/1914: {using bonding}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates.

## Claims

### Claim 1

A system for enhancing bonding between a first substrate and a second substrate, the first substrate having a central portion and a perimeter portion, the system comprising:
a unipolar electrostatic chuck configured to receive the first substrate, the chuck including a dielectric base and an electrode at least partially within the dielectric base, wherein a top surface of the electrode is configured to directly electrically contact the central portion and the perimeter portion of the first substrate;
a conductor configured to be electrically coupled to the second substrate; and
a power supply electrically coupled to the electrode and conductor, respectively, to apply an electrical bias between the electrode and conductor.

### Claim 2 (depends on 1)

The system of claim 1, further comprising an electrical element positioned in a plasma chamber configured to energize a plasma gas in the plasma chamber.

### Claim 3 (depends on 2)

The system of claim 2 wherein the plasma chamber is configured to contact at least a portion of the second substrate and is electrically isolated from the first substrate.

### Claim 4 (depends on 2)

The system of claim 2, further comprising a vacuum source coupled to the plasma chamber.

### Claim 5 (depends on 1)

The system of claim 1 wherein the conductor includes a contact pad.

### Claim 6 (depends on 5)

The system of claim 5 wherein the contact pad is configured to contact at least a portion of a top surface of the second substrate.

### Claim 7 (depends on 1)

The system of claim 1 wherein the unipolar electrostatic chuck does not include a dielectric layer between the electrode and the first substrate.

### Claim 8 (depends on 1)

The system of claim 1 wherein the central portion and the perimeter portion of the first substrate make up an entirety of the first substrate, and wherein the electrode of the unipolar electrostatic chuck is configured to directly contact the entirety of the first substrate.