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US 11,114,326 B2Granted
Substrate chucking and dechucking methods
AssigneeApplied Materials, Inc.
InventorsWendell Glenn Boyd, Jr., Jim Zhongyi He, Ramesh Gopalan, Robert T. Hirahara, Govinda Raj
Life of this patent
Estimating the term…
Abstract
Methods for chucking and de-chucking a substrate from an electrostatic chucking (ESC) substrate support to reduce scratches of the non-active surface of a substrate include simultaneously increasing a voltage applied to a chucking electrode embedded in the ESC substrate support and a backside gas pressure in a backside volume disposed between the substrate and the substrate support to chuck the substrate and reversing the process to de-chuck the substrate.
Claims12
A method for chucking a substrate, comprising:
- positioning the substrate on a substrate support, wherein the substrate support is disposed in a processing volume of a processing chamber;
- forming a plasma in the processing volume;
- and
- chucking the substrate to the substrate support, comprising:
- applying a first chucking voltage to a chucking electrode disposed in the substrate support to exert a chucking force on the substrate;
- flowing a gas comprising helium into a backside volume disposed between the substrate and the substrate support;
- and
- increasing the chucking voltage from the first chucking voltage to a second chucking voltage while simultaneously increasing a backside pressure in the backside volume from a first backside pressure to a second backside pressure, wherein the one or both of the first chucking voltage and the second chucking voltage are determined by a method comprising:
- positioning a contact force measurement substrate on the substrate support, wherein the contact force measurement substrate comprises
- one or more contact force sensors selected from the group consisting of piezo-electric sensors, piezo-resistive sensors, micro-electro-mechanical sensors, and combinations thereof, and
- the one or more contact force sensors are disposed adjacent to the substrate support when the contact force measurement substrate is positioned thereon;
- forming a plasma in the processing volume;
- chucking the contact force measurement substrate to the substrate support by applying a chucking calibration voltage;
- determining a contact force between the contact force measurement substrate and the substrate support
- determining a chucking force correction factor, wherein the chucking force correction factor is a percent difference between the contact force determined using the contact force measurement substrate and a desired contact force at the chucking calibration voltage;
- and
- adjusting one or both of the first chucking voltage or the second chucking voltage using the chucking force correction factor.
14 more elements
A substrate chucking method, comprising:
- forming a plasma in a processing volume of a processing chamber;
- and
- applying a chucking voltage to a chucking electrode embedded in a dielectric material of a substrate support disposed in the processing volume, the substrate support having a substrate disposed thereon,
- wherein the chucking voltage applied to the chucking electrode is determined by a method comprising:
- positioning a contact force measurement substrate on the substrate support;
- forming a plasma in the processing volume;
- measuring a contact force between the contact force measurement substrate and the substrate support using one or more piezo-electric sensors disposed on the contact force measurement substrate;
- and
- determining a chucking force correction factor, wherein the chucking force correction factor is a percent difference between the contact force determined using the contact force measurement substrate and a desired contact force at a chucking calibration voltage;
- and
- adjusting one or both of a first chucking voltage or a second chucking voltage using the chucking force correction factor.
8 more elements
Dependencies are inferred from the claim text.