Method for cleaning semiconductor wafer and manufacturing method of semiconductor wafer using the method for cleaning

A method for cleaning a semiconductor wafer in which the semiconductor wafer is immersed and cleaned in ozone water in a cleaning tank, the method comprising:

• supplying the ozone water into the cleaning tank from a lower part of the cleaning tank with the ozone water overflowing from an upper part of the cleaning tank to outside of the cleaning tank;
• subsequently, stopping a supply of the ozone water;
• subsequently, immersing the semiconductor wafer into the ozone water in the cleaning tank;
• and
• subsequently, resupplying the ozone water into the cleaning tank from the lower part of the cleaning tank with the ozone water overflowing again from the upper part of the cleaning tank to the outside of the cleaning tank;
• wherein:
• a period of time from when the supply of the ozone water is stopped until the ozone water is resupplied is set to 1 second or more to 30 seconds or less;
• and
• a period of time from when the supply of the ozone water is stopped until a lower end of the semiconductor wafer contacts a liquid surface of the ozone water is set to 1 second or more to 10 seconds or less.