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US 11,114,309 B2Granted
Articles and methods of forming vias in substrates
AssigneeCorning Incorporated
InventorsRobert Alan Bellman, Shiwen Liu
Life of this patent
Estimating the term…
Abstract
Methods of forming vias in substrates having at least one damage region extending from a first surface etching the at least one damage region of the substrate to form a via in the substrate, wherein the via extends through the thickness T of the substrate while the first surface of the substrate is masked. The mask is removed from the first surface of the substrate after etching and upon removal of the mask the first surface of the substrate has a surface roughness (Rq) of about less than 1.0 nm.
Claims9
An article comprising:
- a substrate comprising a first surface and a second surface separated by a thickness T;
- at least one damage region within the substrate and extending from the first surface;
- and
- a first film layer disposed on an undamaged region of the first surface of the substrate, the first film layer selected from a group consisting of diphenylsilicon, phenylsilicon, methylphenylsilicon, and diamond-like carbon (DLC),
- wherein the first film layer is configured to be removed via oxidation from the first surface of the substrate without increasing a surface roughness (Rq) of the first surface of the substrate beyond Van der Waal bonding capability with an additional surface.
2 more elements
Dependencies are inferred from the claim text.