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US 11,114,304 B2Granted
Substrate processing method
AssigneeTokyo Electron Limited
InventorsTakayuki Katsunuma, Toru Hisamatsu, Shinya Ishikawa, Yoshihide Kihara, Masanobu Honda, Maju Tomura, Sho Kumakura
Life of this patent
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Abstract
A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
Claims20
A substrate processing method comprising:
- forming a film on a substrate having a pattern using plasma, wherein the film includes a silicon-containing film, and wherein forming of the film is controlled to control a film forming area and to control a film forming amount in the film forming area;
- after forming of the film, generating plasma in a processing chamber where the substrate is disposed to form a reaction layer on a surface of the film, wherein the reaction layer includes ammonium fluorosilicate;
- and
- applying energy to the substrate where the reaction layer is formed on the surface of the film to remove the reaction layer,
- wherein, in the generating of the plasma, the substrate is set to be 100° C. or lower, and
- in the applying energy to the substrate, the substrate is set to be 100° C. or higher,
- the method further including changing a size and/or shape of the pattern by removing a portion of the pattern.
4 more elements
A substrate processing method comprising:
- forming a film on a substrate having a pattern;
- after forming of the film, generating plasma in a processing chamber where the substrate is disposed to form a reaction layer on a surface of the film;
- and
- applying energy to the substrate where the reaction layer is formed on the surface of the film to remove the reaction layer,
- wherein, in the substrate, the pattern is formed on a first SiO2 film provided on a silicon layer to reach the silicon layer, a top surface of the first SiO2 film and a side surface of the pattern are covered with a SiN film, and a native oxide film is formed on the silicon layer at a bottom of the pattern,
- wherein in the forming of the film, a second SiO2 film is formed at least on the side surface of the pattern,
- wherein in the generating of the plasma, the plasma is generated while supplying a reaction gas in the processing chamber, and the second SiO2 film and the native oxide film are reacted with the reaction gas to form the reaction layer, and
- wherein in the applying of energy to the substrate, the native oxide film is removed by removing the reaction layer.
5 more elements
A substrate processing method comprising:
- forming a pattern in a first silicon-containing film that is formed on a silicon layer of a substrate thereby causing a native oxide film to be formed on the silicon layer at a bottom of the pattern;
- covering a top surface of the first silicon-containing film and a side surface of the pattern with a SiN film;
- forming a second silicon-containing film at least on the side surface of the pattern;
- generating plasma in a processing chamber where the substrate is disposed to form a reaction layer on a surface of the second silicon-containing film;
- and
- applying energy to the substrate where the reaction layer is formed on the surface of the second silicon-containing film to remove the reaction layer.
3 more elements
Dependencies are inferred from the claim text.