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US 11,114,294 B2Granted
Structure including SiOC layer and method of forming same
AssigneeASM IP Holding B.V.
InventorsBed Prasad Sharma, Shankar Swaminathan, YoungChol Byun, Eric James Shero
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Abstract
A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.
Claims20
A method of forming a structure, the method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising a surface comprising a first material and a second material, the first material comprising a metal and the second material comprising one or more of an oxide, a nitride, and an oxynitride;
- selectively depositing a layer comprising silicon nitride on the first material relative to the second material;
- and
- depositing a layer comprising SiOC overlying the layer comprising silicon nitride.
1 more element
A method of forming a structure, the method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising a surface comprising a first material and a second material, the first material comprising an oxide and the second material comprising a nitride;
- and
- selectively depositing a layer comprising SiOC overlying the first material.
Dependencies are inferred from the claim text.