Non-disappearing anode for use with dielectric deposition

A process kit for a RF physical vapor deposition (RFPVD) chamber, comprising:

• a conductive cylindrical body, wherein the conductive cylindrical body is configured as a cylindrical shield, the conductive cylindrical body having an internal surface and an external surface, the conductive cylindrical body having orientation when the process kit is in use in the RFPVD chamber that defines a top of the conductive cylindrical body and a vertical centerline, the top of the conductive cylindrical body configured to be supported by the RFPVD chamber and extending radially from the vertical centerline, the conductive cylindrical body having an array of features formed in a substantially vertical surface of the conductive cylindrical body that is exposed to a plasma when the process kit in use in the RFPVD chamber, each feature within the array of features is defined by:
• a protrusion extending beyond the internal surface,
• an opening formed in the internal surface of the conductive cylindrical body:
• and
• an indentation extending away from the opening into the conductive cylindrical body toward the external surface, the indentation exposing an inner surface of the conductive cylindrical body, the indentation having a geometric centerline extending through the opening equidistant from the inner surface, the geometric centerline extending away from the top of the conductive cylindrical body through the opening toward the vertical centerline and the geometric centerline forming an obtuse angle with the vertical centerline of the conductive cylindrical body, wherein each feature has an orientation of the geometric centerline and is oriented toward a bottom of the conductive cylindrical body.

A physical vapor deposition (PVD) chamber, comprising:

• a chamber body defining in interior volume;
• a substrate support disposed in the interior volume;
• a sputtering target disposed in the interior volume above the substrate support;
• and
• a process kit disposed in the interior volume between the substrate support and sputtering target, the process kit comprising:
• a conductive cylindrical body, wherein the conductive cylindrical body is configured as a cylindrical shield, the conductive cylindrical body having an internal surface and an external surface, and a vertical centerline, the conductive cylindrical body having an array of features formed in a surface of the conductive cylindrical body that is exposed to a plasma when in use in the PVD chamber, each feature within the array of features is defined by:
• a protrusion extending beyond the internal surface,
• an opening formed in the internal surface of the conductive cylindrical body:
• and
• an indentation extending away from the opening into the conductive cylindrical body toward the external surface, the indentation exposing an inner surface of the conductive cylindrical body, the indentation having a geometric centerline extending through the opening equidistant from the inner surface, the geometric centerline extending away from the target through the opening toward the vertical centerline and the geometric centerline, the geometric centerline forming an obtuse angle with the vertical centerline of the conductive cylindrical body, wherein each feature has an orientation of the geometric centerline and is oriented toward a bottom of the conductive cylindrical body, a top of the conductive cylindrical body configured to be supported by the PVD chamber and extending radially from the vertical centerline.