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US 11,114,283 B2Granted
Reactor, system including the reactor, and methods of manufacturing and using same
AssigneeASM IP Holding B.V.
InventorsTom Blomberg, Varun Sharma, Chiyu Zhu
Life of this patent
Estimating the term…
Abstract
A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.
Claims15
A method of forming a semiconductor etching reactor, the method comprising:
- providing a reaction chamber, the reaction chamber being made of a first material;
- providing a susceptor, the susceptor being made of a second material and being configured to hold a substrate for processing;
- providing a showerhead, the showerhead being made of a third material;
- based on the first material, the second material, and the third material, selecting and providing a first gas source that is specifically configured for etching the first material, the second material, and the third material, the first gas source configured to provide a first gas precursor to the reaction chamber for a process of etching a film on the substrate;
- reacting the first material, the second material, and the third material with the first gas precursor to etch the first material, the second material, and the third material and form a volatile gas compound;
- and
- removing the volatile gas compound from the reaction chamber.
4 more elements
A method of forming a semiconductor etching reactor, the method comprising:
- providing a reaction chamber made of a first material;
- and
- selecting and providing a first gas source configured to provide a first gas precursor for a process of etching a film on a substrate held in the reaction chamber, wherein selecting the first gas source comprises specifically choosing a precursor chemistry that is able to etch the first material.
A method of forming a semiconductor etching reactor, the method comprising:
- providing a first gas source configured to provide a first gas precursor for a process of etching a film on a substrate;
- and
- selecting and providing a reaction chamber made of a first material that is configured to be etched by the first gas precursor, wherein selecting the reaction chamber comprises specifically choosing a composition of the first material that is able to be etched by the first gas precursor.
Dependencies are inferred from the claim text.