Method for manufacturing perovskite solar cell module and perovskite solar cell module

A method for manufacturing perovskite solar cell module, comprising following steps:

• (1) providing a transparent conductive substrate that comprises a transparent substrate and a transparent conductive layer formed on the transparent substrate;
• (2) scribing the transparent conductive layer by using a laser beam, thereby forming a plurality of scribe lines on the transparent conductive layer, such that the transparent conductive layer is divided into a plurality of transparent conductive films by the plurality of scribe lines;
• (2a) applying a surface treatment to the transparent substrate that is provided with the plurality of transparent conductive films thereon;
• (3) positioning a first mask over the plurality of transparent conductive films, and then forming a plurality of hole transport films respectively on the plurality of transparent conductive films through the first mask, wherein each of the plurality of hole transport films has a thickness in a range between 5 nm and 60 nm;
• (4) letting the first mask be disposed over the plurality of hole transport films, and subsequently forming a plurality of active layers respectively on the plurality of hole transport films by using the first mask in combination with a vacuum coating apparatus, wherein a vacuum coating temperature of the vacuum coating apparatus is modulated to be in a range between 70° C. and 150° C., and a layer width of each of the plurality of active layers and a layer width of each of the plurality of transparent conductive films having a width ratio that is in a range between 0.75 and 9;
• (5) positioning the first mask over the plurality of active layers, and then forming a plurality of electron transport films respectively on each of the plurality of active layers by using the first mask in combination with the vacuum coating apparatus, wherein a flow rate of an oxygen feeding into the vacuum coating apparatus is modulated to be in a range between 0.1 sccm and 5 sccm;
• and
• (6) disposing a second mask over the plurality of electron transport films, and subsequently forming an electrical connection layer on each of the plurality of electron transport films through the second mask.