Rare earth thin film magnet and production method thereof
AssigneeJX Nippon Mining & Metals Corporation
InventorsMasaki Nakano, Hirotoshi Fukunaga, Takeshi Yanai, Hironobu Sawatari
Life of this patent
Estimating the term…
Loading patent…
AssigneeJX Nippon Mining & Metals Corporation
InventorsMasaki Nakano, Hirotoshi Fukunaga, Takeshi Yanai, Hironobu Sawatari
Estimating the term…
A rare-earth thin film magnet is provided which includes Nd, Fe and B as essential components, characterized by including a Si substrate having an oxide film present on a surface thereof, a Nd base film formed as a first layer over the Si substrate, and a Nd—Fe—B film formed as a second layer on the first layer. The rare earth thin film magnet and a production process therefor provides a rare earth thin film magnet suffering neither film separation nor substrate breakage and having satisfactory magnetic properties even when the second layer has composition in the range of 0.120 ≤Nd/(Nd+Fe)<0.150, which corresponds to a compositional range in the vicinity of a stoichiometric composition.
A rare earth thin film magnet having Nd, Fe and B as essential components comprising:
A method of producing a rare earth thin film magnet, wherein an oxide film is formed on a Si substrate, a Nd base film as a first layer is formed on the Si substrate via laser pulsed deposition, a Nd—Fe—B film as a second layer is subsequently formed thereon, and heat treatment is thereafter performed thereto to produce a rare earth thin film magnet having Nd, Fe and B as essential components comprising a Nd base film, as a first layer, formed on a Si substrate having an oxide film on a surface thereof, and a Nd—Fe—B film as a second layer on the first layer, a composition (atomic ratio) of Nd—Fe—B of the second layer satisfies a conditional expression of 0.120≤Nd/(Nd+Fe)<0.150, and a film thickness of the second layer is 5 μm or more and 50 μm or less and a film thickness of the first layer is 0.2 μm or more and 5.0 μm or less.
Dependencies are inferred from the claim text.