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AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKe Liang, Liang Qiao, Chunyuan Hou
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A sense circuit of a memory cell includes a first switch, a sense node, a third switch, a connection node, a fourth switch, and a memory cell coupled in series. A boost driver is coupled to the sense node. A second switch and the connection node are coupled in series. The boost driver outputs a first voltage when the first, second, third, fourth switches are turned on. The third switch is then turned off and the boost driver outputs a second voltage higher than the first voltage such that the voltage level at the sense node is not higher than a system voltage. The third switch is turned on, then turned off and the boost driver outputs an intermediate voltage between the first voltage and the second voltage. A state of the memory cell is determined during output of the intermediate voltage.
A method of operating a sense circuit of a memory cell, the sense circuit comprising a first switch, a second switch, a third switch and a fourth switch, a first end of the first switch being coupled to a system voltage source outputting a system voltage, a second end of the first switch being coupled to a sense node, a first end of the third switch and a boost driver, a second end of the second switch being coupled to a second end of the third switch and a first end of the fourth switch, the method comprising:
A sense circuit comprising:
A method of operating a sense circuit of a memory cell, the sense circuit comprising a sense node, a switch, and the memory cell coupled in series, and a boost driver coupled to the sense node, the method comprising:
A memory device comprising:
Dependencies are inferred from the claim text.