Dedicated read voltages for data structures

An apparatus, comprising:

• an array of memory cells;
• and
• a controller configured to:
• generate a read voltage based on a temperature of the apparatus;
• responsive to determining that at least one of an initial read voltage utilized to read a first group of memory cells, storing a first quantity of data, of the array and an initial read voltage utilized to read a second group of memory cells, storing a second quantity of data, of the array is no longer valid, reread the at least one of the first group of memory cells and the second group of memory cells with the read voltage, wherein the initial read voltage utilized to read the first group of memory cells is dedicated to the first group of memory cells and wherein the initial read voltage utilized to read the second group of memory cells is dedicated to the second group of memory cells different from the initial read voltage utilized to read the first group of memory cells.

An apparatus, comprising:

• an array of memory cells;
• and
• a controller configured to:
• reread a first managed unit of the array with a third temperature-based read voltage, different from a first temperature based-read voltage, dedicated to the first managed unit, utilized to previously read the first managed unit, when a quantity of errors associated with the previous reading of the first managed unit with the first temperature-based read voltage exceeds a first threshold quantity;
• reread a second managed unit of the array with the third temperature-based read voltage, different from a second temperature based-read voltage, dedicated to the second managed unit and different from the first temperature based-read voltage, utilized to previously read the second managed unit, when a quantity of errors associated with the previous reading of the second managed unit with the second temperature-based read voltage exceeds a second threshold quantity.