Operation methods of ferroelectric memory
AssigneeWuxi Petabyte Technologies Co., Ltd.
InventorFeng Pan
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Abstract
Embodiments of operation methods of ferroelectric memory are disclosed. In an example, a method for reading ferroelectric memory cells is disclosed. The ferroelectric memory cells include a first set of ferroelectric memory cells and a second set of ferroelectric memory cells. In a first cycle, first data in a first ferroelectric memory cell of the first set of ferroelectric memory cells is sensed. In a second cycle subsequent to the first cycle, the sensed first data is written back to the first ferroelectric memory cell, and second data in a second ferroelectric memory cell of the second set of ferroelectric memory cells is simultaneously sensed.
Claims13
A method for reading ferroelectric memory cells comprising a first set of ferroelectric memory cells and a second set of ferroelectric memory cells, the method comprising:
- in a first cycle, sensing first data in a first ferroelectric memory cell of the first set of ferroelectric memory cells;
- and
- in a second cycle subsequent to the first cycle, simultaneously writing the sensed first data back to the first ferroelectric memory cell, and sensing second data in a second ferroelectric memory cell of the second set of ferroelectric memory cells, wherein
- each ferroelectric memory cell of the first set of ferroelectric memory cells stores same data as a respective ferroelectric memory cell of the second set of ferroelectric memory cells such that the respective ferroelectric memory cell of the second set of ferroelectric memory cells is a replica of the ferroelectric memory cell of the first set of ferroelectric memory cells.
A method for operating ferroelectric memory cells comprising a first set of ferroelectric, memory cells and a second set of ferroelectric memory cells, the method comprising:
- in a first write cycle, simultaneously sensing stored data in a first ferroelectric memory cell of the first set of ferroelectric memory cells, and sensing stored data in a second ferroelectric memory cell of the second set of ferroelectric memory cells;
- in a second write cycle subsequent to the first write cycle, simultaneously writing first data to the first ferroelectric memory cell and the second ferroelectric memory cell, the first data being different from the stored data in the first ferroelectric memory cell and the second ferroelectric memory cell;
- in a first read cycle, sensing the first data in the first ferroelectric memory cell;
- and
- in a second read cycle subsequent to the first read cycle, simultaneously writing the sensed first data back to the first ferroelectric memory cell, and sensing the first data in the second ferroelectric memory cell.
Dependencies are inferred from the claim text.