# US 11,114,148 B1 · Efficient ferroelectric random-access memory wordline driver, decoder, and related circuits > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,114,148 B1 - Document ID: US11114148B1 - Status: Granted - Kind: B1 - Application number: 16/851,026 - Filed: 2020-04-16 - Granted: 2021-09-07 - Earliest claimed: 2020-04-16 - Assignees: Wuxi Petabyte Technologies Co., Ltd. - Applicants: Wuxi Petabyte Technologies Co., Ltd. - Inventors: Feng Pan - Web page: https://patentgrep.com/patent/US11114148B1 ## CPC - G11C 8/08: Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines - G11C 11/2257: {Word-line or row circuits} - G11C 8/10: Decoders - G11C 11/221: {using ferroelectric capacitors} - H10B 51/00: Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors - H10B 53/40: characterised by the peripheral circuit region - G11C 7/1078: {Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits} - G11C 7/12: Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines - G11C: STATIC STORES (semiconductor memory devices H10B) - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A wordline driver may include the following: a first transistor having a first node at the input and a second node at an input voltage; a second transistor having a first node at the input node, a second node at a third node of the first transistor, and a third node at ground; a third transistor having a first node at the input voltage, a second node at the first internal node and a third node at a second internal node; a fourth transistor having a first node at an internal node, a second node at a boosted voltage, and a third node at a wordline; a fifth transistor having a first node at an internal node, a second node at the wordline, and a third node at ground; and a sixth transistor between the wordline, the boosted voltage, and the second internal node. ## Claims ### Claim 1 A wordline driver, comprising: an input node connected to an output of a wordline decoder; a first transistor having a first node connected to the input node and a second node connected to an input voltage source; a second transistor having a first node connected to the input node, a second node connected to a third node of the first transistor at a first internal node, and a third node connected to ground; a third transistor having a first node connected to the input voltage source, a second node connected to the first internal node and a third node connected to a second internal node; a fourth transistor having a first node connected to the second internal node, a second node connected to a boosted voltage source, and a third node connected to a wordline; a fifth transistor having a first node connected to the second internal node, a second node connected to the wordline, and a third node connected to ground; and a sixth transistor having a first node connected to the wordline, a second node connected to the boosted voltage source, and a third node connected to the second internal node. ### Claim 2 (depends on 1) The wordline driver of claim 1, wherein the first transistor and the second transistor respectively comprise a p-type transistor and an n-type transistor. ### Claim 3 (depends on 1) The wordline driver of claim 1, wherein the fourth transistor and the fifth transistor respectively comprise a p-type transistor and an n-type transistor. ### Claim 4 (depends on 1) The wordline driver of claim 1, wherein the third transistor comprises an n-type transistor. ### Claim 5 (depends on 1) The wordline driver of claim 1, wherein the sixth transistor comprises a p-type transistor. ### Claim 6 (depends on 1) The wordline driver of claim 1, wherein the first node of the first transistor, the first node of the second transistor, the first node of the third transistor, the first node of the fourth transistor, the first node of the fifth transistor, and the first node of the sixth transistor each comprises a respective gate of the corresponding transistor. ### Claim 7 (depends on 1) The wordline driver of claim 1, wherein the input voltage source comprises a common voltage source of a chip beating the wordline driver. ### Claim 8 (depends on 1) The wordline driver of claim 1, wherein the boosted voltage source comprises a boosting capacitor. ### Claim 9 A wordline driver, comprising: an input node connected to an output of a wordline decoder and configured to receive an input signal from the wordline decoder; a first complementary pair of transistors connected to the input node and configured to provide an inverse of the input signal to an internal node of the wordline driver in a first power domain; and a second complementary pair of transistors in a second power domain and configured to receive the inverse of the input signal and to output a re-inverted version of the input signal to a wordline, wherein the second complementary pair is configured to provide the re-inverted version of the input signal at a boosted voltage. ### Claim 10 (depends on 9) The wordline driver of claim 9, further comprising: a feedback transistor configured to be controlled by the re-inverted version of the input signal and configured to provide the boosted voltage to the internal node when the re-inverted version of the input signal is low. ### Claim 11 (depends on 10) The wordline driver of claim 10, wherein the feedback transistor comprises an p-type transistor. ### Claim 12 (depends on 9) The wordline driver of claim 9, further comprising a blocking transistor configured to leave the internal node floating when the input voltage drops below a gate voltage of the blocking transistor. ### Claim 13 (depends on 12) The wordline driver of claim 12, wherein the blocking transistor comprises an n-type transistor. ### Claim 14 (depends on 12) The wordline driver of claim 12, wherein a gate of the blocking transistor is configured to receive an input voltage level from a common voltage source. ### Claim 15 (depends on 9) The wordline driver of claim 9, wherein the first complementary pair of transistors comprises a p-type transistor and an n-type transistor. ### Claim 16 (depends on 9) The wordline driver of claim 9, wherein the second complementary pair of transistors comprises a p-type transistor and an n-type transistor. ### Claim 17 (depends on 9) The wordline driver of claim 9, wherein the first complementary pair of transistors is configured to select between an input voltage level from a common voltage source and ground based on the input signal. ### Claim 18 (depends on 9) The wordline driver of claim 9, wherein the second complementary pair of transistors is configured to select between the boosted voltage and ground based on the inverse of the input signal. ### Claim 19 (depends on 9) The wordline driver of claim 9, wherein the boosted voltage is provided by a boosting capacitor configured to provide a voltage pulse configured to pass a common voltage to a top plate of a ferroelectric random access memory capacitor. ### Claim 20 A circuit, comprising: a wordline decoder connected to an input voltage source and having an output configured to provide a selection signal; an input node connected to an output of the wordline decoder; a first transistor having a first node connected to the input node and a second node connected to the input voltage source; a second transistor having a first node connected to the input node, a second node connected to a third node of the first transistor at an internal node, and a third node connected to ground; a third transistor having a first node connected to the internal node, a second node connected to a boosted voltage source, and a third node connected to a wordline; a fourth transistor having a first node connected to the internal node, a second node connected to the wordline, and a third node connected to ground; a fifth transistor having a first node connected to the wordline, a second node connected to the boosted voltage source, and a third node connected to the internal node; and a sixth transistor connected at a first node to the first transistor and the second transistor and at a second node to the internal node. ### Claim 21 (depends on 20) The circuit of claim 20, wherein the sixth transistor is configured to be activated by the input voltage source. ### Claim 22 (depends on 20) The circuit of claim 20, wherein the first transistor, second transistor, and sixth transistor are configured to operate in a first power domain drawing from a first voltage source at a first level and the third transistor, fourth transistor, and fifth transistor are configured to operate in a second power domain drawing from a second voltage source at a second level.