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US 11,114,146 B2Granted
Nanosecond non-destructively erasable magnetoresistive random-access memory
AssigneeInternational Business Machines Corporation
InventorsAlexander Reznicek, Eric Raymond Evarts, Virat Vasav Mehta, Bahman Hekmatshoartabari
Life of this patent
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Abstract
An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is directed toward the MRAM cell.
Claims18
A magnetoresistive random-access memory (MRAM) structure comprising:
- an MRAM cell disposed between bit line and word line circuit elements;
- and
- a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell, wherein a laser output of the VCSEL is directed toward the MRAM cell, wherein the VCSEL comprises Gallium Arsenide layers.
A magnetoresistive random-access memory (MRAM) structure comprising:
- a plurality of MRAM cells disposed between bit line and word line circuit elements;
- a vertical-cavity surface-emitting laser (VCSEL) element disposed above the plurality of MRAM cells, wherein the VCSEL comprises Gallium Arsenide layers;
- and
- wherein a laser output of the VCSEL is directed toward the plurality of MRAM cells.
1 more element
A method of fabricating a semiconductor device, the method comprising:
- fabricating a plurality of magnetoresistive random-access memory (MRAM) cells electrically connected to one or more bit lines and word lines, the plurality of MRAM cells encapsulated in a dielectric material;
- forming a grain filter cavity in the dielectric material;
- forming an oriented seed crystal in the grain filter;
- forming an amorphous semiconductor layer adjacent to the seed crystal;
- crystalizing the amorphous semiconductor layer;
- forming a vertical-cavity surface emitting laser (VCSEL) adjacent to the semiconductor layer;
- removing the semiconductor layer;
- and
- forming a dielectric layer on and around the VCSEL.
6 more elements
Dependencies are inferred from the claim text.