# US 11,114,145 B2 · Three-dimensional magnetic device and magnetic memory

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- Number: US 11,114,145 B2
- Document ID: US11114145B2
- Status: Granted
- Kind: B2
- Application number: 16/845,593
- Filed: 2020-04-10
- Published: 2021-01-07
- Granted: 2021-09-07
- Earliest claimed: 2019-07-04
- Assignees: Xi'an Jiaotong University
- Applicants: Xi'an Jiaotong University
- Inventors: Tai Min; Runzi Hao; Lei Wang; Xue Zhou
- Web page: https://patentgrep.com/patent/US11114145B2

## CPC

- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/155: with cylindrical configuration
- G11C 11/1659: {Cell access}
- G11C 11/1673: {Reading or sensing circuits or methods}
- G11C 11/1675: {Writing or programming circuits or methods}
- G11C 11/18: using Hall-effect devices
- H10B 61/20: {comprising components having three or more electrodes, e.g. transistors}
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10N 50/85: Materials of the active region
- H10N 52/80: Constructional details
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

Disclosed is a three-dimensional magnetic device based on a spin Hall effect which includes an internal electrode, at least one magnetic junction and at least one external electrode. The internal electrode, the at least one magnetic junction and the at least one external electrode have columnar structures. Each of the at least one magnetic junction comprises a magnetic free layer, a magnetic reference layer and a non-magnetic spacing layer between magnetic free layer and magnetic reference layer. The magnetic free layer is in contact with internal electrode, and the magnetic reference layer in each of the at least one magnetic junction is in contact with a corresponding one of the at least one external electrode. The three-dimensional magnetic device may be stacked in a normal direction of the bottom surface of the internal electrode. Magnetization reversal of three-dimensional magnetic device may be realized by a combination of a spin-orbit torque and a spin transfer torque. The magnetic device has advantages of reduced heating, improved reliability and stability, high storage density while ensuring thermal stability.

## Claims

### Claim 1

A three-dimensional magnetic memory, comprising:
a three-dimensional magnetic device including an internal electrode with a columnar structure, at least one magnetic junction with a columnar structure configured to surround the internal electrode; and at least one external electrode with a columnar structure; and
an operation circuit including a first-electrical-terminal configured to be provided on one end of the internal electrode, a second-electrical-terminal configured to be provided on an opposite end of the internal electrode, at least one third-electrical-terminal, and an operation module,
wherein each one of the at least one external electrode is configured to surround a corresponding one of the at least one magnetic junction,
wherein the at least one magnetic junction is stacked in a direction perpendicular to the bottom surface of the internal electrode,
wherein each of the at least one magnetic junction includes: a magnetic free layer configured to be in contact with the internal electrode and used for data storage; a magnetic reference layer configured to be in contact with a corresponding one of the at least one external electrode; and a non-magnetic spacing layer between the magnetic free layer and the magnetic reference layer,
wherein each of the at least one third-electrical-terminal is configured to be connected to a corresponding one of the at least one external electrode,
wherein the first-electrical-terminal, the second-electrical-terminal and the at least one third-electrical-terminal are connected to the operation module, and the operation module is used to switch and/or sense a resistance state of the at least one magnetic junction of the three-dimensional magnetic device.

### Claim 2 (depends on 1)

The three-dimensional magnetic memory of claim 1, wherein the internal electrode is made of a heavy metal/metalloid or an alloy/compound thereof, including one or more of Nb, Ta, Cr, Mo, W, Re, Ru, Os, Ir, Pd, Pt, Au, Cd, Hg, B, Tl, Sn, Pb, Sb, Bi, Se, Te, Cl, Sm, TaN, WN, Sb2Te3, BiSb, Bi2Se3, Bi2Te3, (BiSb)2Te3, HgTe, BiSe, (Bi0.57Sb0.43)2Te3, TlBiSe2, Bi1.5Sb0.5Te1.8Se1.2, SnTe, Bi2-xCrxSe3, SmB6, BiTeCl, HgTe/CdTe.

### Claim 3 (depends on 1)

The three-dimensional magnetic memory of claim 1, wherein the magnetic free layer in each of the at least one magnetic junction is made of a ferromagnetic or ferrimagnetic material or the alloy thereof, including one or more of Fe, Co, Ni, Mn, FeCo, FeNi, FePd, FePt, CoPd, CoPt, YCo, LaCo, PrCo, NdCo, SmCo, MnBi, CoFeB or MnNiSb, and a combination thereof with one or more materials selected from B, Al, Zr, Hf, Nb, Ta, Cr, Mo, Pd or Pt;
or the magnetic free layer is made of a synthetic ferromagnetic or ferrimagnetic material with a laminated structure of 3d, 4d, 4f, 5d, Sf, or rare earth metals, wherein the laminated structure is selected from, but not limited to, Co/Ir, Co/Pd, Co/Pt, Co/Au, Co/Ni or CrCo/Pt;
or the magnetic free layer is made of a semi-metallic ferromagnetic material including a Heusler alloy in a form of XYZ or X2YZ, wherein X is selected from one or more of Mn, Fe, Co, Ni, Pd, or Cu, Y is selected from one or more of Ti, V, Cr, Mn, Fe, Co, or Ni, and Z is selected from one or more of Al, Ga, In, Si, Ge, Sn, or Sb;
or the magnetic free layer is made of a synthetic antiferromagnetic material, which is formed by ferromagnetic layers separated by non-magnetic metal layers, wherein each of the ferromagnetic layers of the magnetic free layer is selected from, but not limited to, one or more of Fe, Co, Ni, FeCo, CrCoPt, or CoFeB, or one of laminated structures of (Co/Ni)p, (Co/Pd)m, or (Co/Pt)n, wherein m, n, p refer to the numbers of lamination layers; and the non-magnetic metal layer of the magnetic free layer is selected from one or more of Nb, Ta, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pt, Cu, Ag, or Au.

### Claim 4 (depends on 1)

The three-dimensional magnetic memory of claim 1, wherein the non-magnetic spacing layer of each of the at least one magnetic junction is made of an oxide, a nitride, or an oxynitride selected from one or more of Mg, B, Al, Ca, Sr, La, Ti, Hf, V, Ta, Cr, W, Ru, Cu, In, Si or Eu in combination with one or more of N, or O;
or the non-magnetic spacing layer is made of a metal or an alloy selected from one or more of Mg, Al, Cu, Ag, Au, Y, Ti, V, Nb, Ta, Cr, Mo, W, Ru, Os, Rh, Pd or Pt;
or the non-magnetic spacing layer is made of SiC or a ceramic material.

### Claim 5 (depends on 1)

The three-dimensional magnetic memory of claim 1, wherein each of the at least one external electrode is made of a metal or an alloy selected from one or more of Li, Mg, Al, Ca, Sc, Ti, V, Mn, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Ba, Hf, Ta, W, Re, Os, Ir, Pt, Au, Tl, Pb, Bi, Po, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm or Yb.

### Claim 6 (depends on 1)

The three-dimensional magnetic memory of claim 1, wherein the magnetization of the magnetic free layer in each of the at least one magnetic junction is in a normal direction of the surface of the magnetic free layer;
or the magnetization of the magnetic free layer is in a tangent direction of the surface of the magnetic free layer.

### Claim 7 (depends on 1)

The three-dimensional magnetic memory of claim 1, wherein the magnetization reversal of the magnetic free layer in a selected one of the at least one magnetic junction is achieved by at least a spin-orbit torque provided by a spin-polarized current generated by a charge current flowing through the internal electrode; when no electrical current flows through the internal electrode, no spin-polarized current is generated.

### Claim 8 (depends on 1)

The three-dimensional magnetic memory of claim 1, wherein the magnetization reversal of the magnetic free layer in a selected one of the at least one magnetic junction is achieved by a combination of a spin-orbit torque and a spin transfer torque, the spin-orbit torque being provided by a spin-polarized current generated by a charge current, referred to as first writing current, flowing through the internal electrode, and the spin transfer torque being provided by injecting a second writing current along the radial direction of the annular cross section of the selected one of the at least one magnetic junction.

### Claim 9 (depends on 1)

The three-dimensional magnetic memory of claim 1, wherein the resistance state of a selected one of the at least one magnetic junction is a low resistance state or a high resistance state, and a determination of the resistance state is achieved by injecting a reading current along the radial direction of the annular cross section of the selected one of the at least one magnetic junction.