# US 11,113,498 B2 · Detection device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,113,498 B2 - Document ID: US11113498B2 - Status: Granted - Kind: B2 - Application number: 16/293,250 - Filed: 2019-03-05 - Published: 2019-09-12 - Granted: 2021-09-07 - Earliest claimed: 2018-03-06 - Assignees: Japan Display Inc. - Applicants: Japan Display Inc. - Inventors: Yoshitaka Ozeki; Hayato Kurasawa; Toshinori Uehara; Koshiro Moriguchi - Web page: https://patentgrep.com/patent/US11113498B2 ## CPC - G06V 40/1306: {non-optical, e.g. ultrasonic or capacitive sensing} - G06F 3/0412: {Digitisers structurally integrated in a display} - G06F 3/0416: {Control or interface arrangements specially adapted for digitisers} - G06F 3/0443: {using a single layer of sensing electrodes} - G06F 3/0446: {using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes} - G06F 3/0448: {Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality} - H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes} - H10D 86/40: characterised by multiple TFTs - H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs} - H10D 86/60: wherein the TFTs are in active matrices - G06F 3/04164: {Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads} - G06F 2203/04111: Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate - G06V: IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract According to one embodiment, a detection device includes a substrate, a drive electrode provided on the substrate, a detection electrode provided on the substrate and capacitively coupling with the drive electrode, and a first thin film transistor and a second thin film transistor, electrically connected to the drive electrode, and the first thin film transistor has a withstand voltage higher than a withstand voltage of the second thin film transistor. ## Claims ### Claim 1 A detection device comprising: a substrate; a drive electrode provided on the substrate; a detection electrode provided on the substrate and capacitively coupling with the drive electrode; a first thin film transistor and a second thin film transistor, electrically connected to the drive electrode, a first insulating film and a second insulating film both stacked on the substrate, wherein the first thin film transistor having a withstand voltage higher than a withstand voltage of the second thin film transistor, the first thin film transistor comprises a first gate electrode and a first semiconductor layer, the second thin film transistor comprises a second gate electrode and a second semiconductor layer, and the first semiconductor layer and the second semiconductor layer are in a same layer and are located between the first insulating film and the second insulating film, the first gate electrode opposes the first semiconductor layer via the first insulating film, and the second gate electrode opposes the second semiconductor layer via the second insulating film, and a distance from the first gate electrode to the first semiconductor layer is greater than a distance from the second gate electrode to the second semiconductor layer. ### Claim 2 (depends on 1) The detection device of claim 1, wherein the first insulating film has a thickness greater than that of the second insulating film. ### Claim 3 (depends on 1) The detection device of claim 1, wherein the first insulating film has a first relative permittivity and the second insulating film has a second relative permittivity, the first relative permittivity being lower than the second relative permittivity. ### Claim 4 (depends on 1) The detection device of claim 1, wherein the second thin film transistor further comprises a third gate electrode opposing the second semiconductor layer via at least the first insulating film. ### Claim 5 (depends on 4) The detection device of claim 4, wherein the third gate electrode is formed of a same material as that of the first gate electrode. ### Claim 6 (depends on 4) The detection device of claim 4, further comprising: an organic insulating film, wherein the first insulating film is provided on the second insulating film, the organic insulating film is provided on the first insulating film, and the third gate electrode is provided between the organic insulating film and the first insulating film. ### Claim 7 (depends on 1) The detection device of claim 1, further comprising: an organic insulating film provided on the first insulating film and the second insulating film and comprising a through-hole, wherein the first thin film transistor comprises a first electrode connected to the first semiconductor layer, and the drive electrode is provided on the organic insulating film and is in contact with the first electrode via the through-hole. ### Claim 8 (depends on 7) The detection device of claim 7, wherein the organic insulating film comprises a stepped portion. ### Claim 9 (depends on 1) The detection device of claim 1, further comprising: a relay electrode intersecting the detection electrode in a plan view and connected to the drive electrode, wherein the relay electrode is in contact with the substrate. ### Claim 10 A detection device comprising: a substrate; a drive electrode provided on the substrate; a detection electrode provided on the substrate and capacitively coupling with the drive electrode; a first thin film transistor and a second thin film transistor, electrically connected to the drive electrode, a relay electrode intersecting the detection electrode in a plan view and connected to the drive electrode, wherein the relay electrode is in contact with the substrate, the first thin film transistor having a withstand voltage higher than a withstand voltage of the second thin film transistor. ### Claim 11 (depends on 10) The detection device of claim 10, wherein the first thin film transistor comprises a first gate electrode and a first semiconductor layer, the second thin film transistor comprises a second gate electrode and a second semiconductor layer, and a distance from the first gate electrode to the first semiconductor layer is greater than a distance from the second gate electrode to the second semiconductor layer. ### Claim 12 (depends on 11) The detection device of claim 11, further comprising a first insulating film and a second insulating film both stacked on the substrate, wherein the first semiconductor layer and the second semiconductor layer are in a same layer and are located between the first insulating film and the second insulating film, the first gate electrode opposes the first semiconductor layer via the first insulating film, and the second gate electrode opposes the second semiconductor layer via the second insulating film. ### Claim 13 (depends on 12) The detection device of claim 12, wherein the first insulating film has a thickness greater than that of the second insulating film. ### Claim 14 (depends on 12) The detection device of claim 12, wherein the first insulating film has a first relative permittivity and the second insulating film has a second relative permittivity, the first relative permittivity being lower than the second relative permittivity. ### Claim 15 (depends on 12) The detection device of claim 12, wherein the second thin film transistor further comprises a third gate electrode opposing the second semiconductor layer via at least the first insulating film. ### Claim 16 (depends on 15) The detection device of claim 15, wherein the third gate electrode is formed of a same material as that of the first gate electrode. ### Claim 17 (depends on 15) The detection device of claim 15, further comprising: an organic insulating film, wherein the first insulating film is provided on the second insulating film, the organic insulating film is provided on the first insulating film, and the third gate electrode is provided between the organic insulating film and the first insulating film. ### Claim 18 (depends on 12) The detection device of claim 12, further comprising: an organic insulating film provided on the first insulating film and the second insulating film and comprising a through-hole, wherein the first thin film transistor comprises a first electrode connected to the first semiconductor layer, and the drive electrode is provided on the organic insulating film and is in contact with the first electrode via the through-hole. ### Claim 19 (depends on 18) The detection device of claim 18, wherein the organic insulating film comprises a stepped portion.