Memory device, semiconductor device, and semiconductor system

A semiconductor system comprising:

• a memory device including a plurality of pages and configured to store a page write count for each of the plurality of pages;
• and
• a semiconductor device configured to change address mapping between an input address and a physical address based on a block write count of a specific block corresponding to the input address and the page write counts of pages included in the specific block,
• wherein each of the plurality of pages includes:
• a data region configured to store data;
• an error correction code (ECC) region configured to store ECC data that is used to detect and correct one or more errors occurring in the data stored in the data region;
• and
• a metadata region configured to store a page write count of a corresponding page, and
• wherein the semiconductor device generates block section information indicating which one of predetermined sections corresponds to the block write count of the specific block and changes the address mapping based on the block section information, and
• wherein the metadata region is accessed independently from the data region and the ECC region by the semiconductor device.