# US 11,112,643 B2 · Method for manufacturing electro-optical device, electro-optical device, and electronic apparatus

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- Number: US 11,112,643 B2
- Document ID: US11112643B2
- Status: Granted
- Kind: B2
- Application number: 16/999,080
- Filed: 2020-08-21
- Published: 2021-03-04
- Granted: 2021-09-07
- Earliest claimed: 2019-08-27
- Assignees: Seiko Epson Corporation
- Applicants: Seiko Epson Corporation
- Inventors: Satoshi Ito; Shotaro Izawa
- Web page: https://patentgrep.com/patent/US11112643B2

## CPC

- G02F 1/133526: {Lenses, e.g. microlenses or Fresnel lenses}
- G02F 1/134309: {characterised by their geometrical arrangement}
- G02F 2201/121: common or background
- G02F 2201/123: pixel
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

An electro-optical device including a first substrate in which a plurality of pixel electrodes are provided, a second substrate in which a common electrode is provided, and an electro-optical layer disposed between the plurality of pixel electrodes and the common electrode, and having optical characteristics varying in accordance with an electric field, wherein the first substrate or the second substrate includes a base member having light-transmissivity and provided with a plurality of concave faces corresponding to the plurality of pixel electrodes, and a lens layer disposed to fill inner sides of the plurality of concave faces and having a refractive index different from that of the base member, and the base member includes a plurality of layers of which etching rates under a same etching condition differ from one another.

## Claims

### Claim 1

An electro-optical device, comprising:
a first substrate in which a pixel electrode is provided;
a second substrate in which a common electrode is provided; and
an electro-optical layer disposed between the pixel electrode and the common electrode, and having optical characteristics varying in accordance with an electric field, wherein
the first substrate or the second substrate includes
a base member including a plurality of layers of which etching rates under a same etching condition differ from one another, the base member having light-transmissivity and provided with a concave portion corresponding to the pixel electrode, the concave portion passing through a part of the plurality of layers, and
a lens layer disposed to fill inner sides of the concave portion and having a refractive index different from that of the base member, wherein the electro-optical device further comprises:
a transistor corresponding to the pixel electrode,
wherein the base member is disposed in a layer between the transistor and the pixel electrode,
a layer closest to the transistor among the plurality of layers is thicker than other layers.

### Claim 2 (depends on 1)

The electro-optical device according to claim 1, wherein
each of the plurality of layers is a silicon oxide film or a silicon oxynitride film.

### Claim 3 (depends on 2)

The electro-optical device according to claim 2, wherein
content ratios of oxygen elements of the plurality of layers differ from one another.

### Claim 4 (depends on 2)

The electro-optical device according to claim 2, wherein densities of the plurality of layers differ from one another.

### Claim 5 (depends on 1)

An electronic apparatus, comprising:
the electro-optical device according to claim 1; and
a control unit configured to control an operation of the electro-optical device.

### Claim 6

A method for manufacturing an electro-optical device, the method comprising:
laminating a plurality of layers of which etching rates under a same etching condition differ from one another, thereby forming a base member having light-transmissivity;
etching the base member, thereby forming a concave portion, wherein the concave portion passes through a part of the plurality of layers; and
forming a lens layer having a refractive index different from that of the base member, thereby filling an inner side of the concave portion, wherein the electro-optical device comprises:
a transistor corresponding to a pixel electrode,
wherein the base member is disposed in a layer between the transistor and the pixel electrode,
a layer closest to the transistor among the plurality of layers is thicker than other layers.

### Claim 7 (depends on 6)

The method for manufacturing an electro-optical device according to claim 6, wherein each of the plurality of layers is a silicon oxide film or a silicon oxynitride film.

### Claim 8 (depends on 7)

The method for manufacturing an electro-optical device according to claim 7, wherein
content ratios of oxygen elements of the plurality of layers differ from one another.

### Claim 9 (depends on 7)

The method for manufacturing an electro-optical device according to claim 7, wherein
densities of the plurality of layers differ from one another.