Method and device for measuring carbon concentration in silicon single crystal
AssigneeSumco Corporation
InventorShogo Kobayashi
Life of this patent
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Abstract
A method for measuring carbon concentration in silicon single crystal according to the present invention includes a step of measuring a carbon concentration of a sample of silicon single crystal using FT-IR, a step of measuring a temperature of the sample during, prior to, or after the measurement of the carbon concentration of the sample, and steps of correcting a measured value Ycs of the carbon concentration of the sample based on the measuring temperature of the sample when the measured Ycs value of the carbon concentration of the sample is at or below 0.5×1016 atoms/cm3.
Claims9
A method for measuring carbon concentration in silicon single crystal comprising:
- measuring the carbon concentration of a sample of silicon single crystal using FT-IR;
- measuring a temperature of the sample during, prior to, or after the measurement of the carbon concentration of the sample;
- and
- correcting a measured value of the carbon concentration of the sample based on a measuring temperature of the sample when the measured carbon concentration of the sample is at or below 0.5×1016 atoms/cm3.
A device for measuring carbon concentration in silicon single crystal comprising:
- a carbon concentration measurer measuring the carbon concentration of a sample of silicon single crystal using FT-IR;
- a first thermometer measuring the temperature of the sample during, prior to, or after the measurement of the carbon concentration of the sample;
- and
- a carbon concentration corrector correcting the measured value of the carbon concentration of the sample based on a measuring temperature of the sample when the measured carbon concentration of the sample is at or below 0.5×1016 atoms/cm3.
Dependencies are inferred from the claim text.