Pressure sensor, and pressure sensor matrix array including same and manufacturing method therefor

A pressure-sensor matrix array, comprising:

• a first electrode layer including a plurality of first electrodes, which are line-shaped and parallel to each other;
• a second electrode layer including a plurality of second electrodes, which are line-shaped, parallel to each other and intersect the first electrodes;
• a conductive layer positioned between the first electrodes and the second electrodes, formed on the first electrodes at positions corresponding to intersections of the first electrodes and the second electrodes, and including a conductor;
• and
• an active layer positioned between the first electrodes and the second electrodes, formed on the second electrodes at positions corresponding to the intersections of the first electrodes and the second electrodes, being in contact with or being spaced apart from the conductive layer, and including a polymer and a semiconductor dispersed in the polymer.

A method of manufacturing a pressure sensor, comprising:

• (a) forming a first electrode on a first substrate;
• (b) forming a second electrode on a second substrate;
• (c) forming a conductive layer including a conductor on the first electrode;
• (d) forming an active layer including a polymer and a semiconductor dispersed in the polymer on the second electrode;
• and
• (e) positioning the active layer of step (d) so as to be in contact with or be spaced apart from an upper surface of the conductive layer of step (c) to face each other,
• wherein the semiconductor is of an n-type and has a work function of 4 eV or less, and a work function of the conductive layer is 4.5 eV or more;
• or the semiconductor is of a p-type and has a work function of 4.5 eV or more, and the work function of the conductive layer is less than 4 eV.

A method of manufacturing a pressure sensor, comprising:

• (a) forming a first electrode on a first substrate;
• (b) forming a second electrode on a second substrate;
• (c) forming a conductive layer including a conductor on the first electrode;
• (d) forming an active layer including a polymer and a semiconductor dispersed in the polymer on the conductive layer;
• and
• (e) positioning the active layer of step (d) so as to be in contact with an upper surface of the second electrode of step (b),
• wherein the semiconductor is of an n-type and has a work function of 4 eV or less, and a work function of the conductive layer is 4.5 eV or more;
• or the semiconductor is of a p-type and has a work function of 4.5 eV or more, and the work function of the conductive layer is less than 4 eV.

A method of manufacturing a pressure-sensor matrix array, comprising:

• (a) forming a first electrode layer including a plurality of first electrodes, which are line-shaped and parallel to each other, on a first substrate;
• (b) forming a second electrode layer including a plurality of second electrodes, which are line-shaped, parallel to each other and intersect the first electrodes, on a second substrate;
• (c) forming a conductive layer including a conductor on the first electrodes at positions corresponding to intersections of the first electrodes and the second electrodes;
• (d) forming an active layer including a polymer and a semiconductor dispersed in the polymer on the second electrodes at positions corresponding to the intersections of the first electrodes and the second electrodes;
• and
• (e) positioning the active layer of step (d) so as to be in contact with or be spaced apart from an upper surface of the conductive layer of step (c) to face each other and so that the first electrodes and the second electrodes intersect each other.

A method of manufacturing a pressure-sensor matrix array, comprising:

• (a) forming a first electrode layer including a plurality of first electrodes, which are line-shaped and parallel to each other, on a first substrate;
• (b) forming a second electrode layer including a plurality of second electrodes, which are line-shaped, parallel to each other and intersect the first electrodes, on a second substrate;
• (c) forming a conductive layer including a conductor on the first electrodes at positions corresponding to intersections of the first electrodes and the second electrodes;
• (d) forming an active layer including a polymer and a semiconductor dispersed in the polymer on the conductive layer;
• and
• (e) positioning the active layer of step (d) so as to be in contact with an upper surface of the second electrode layer of step (b) and so that the first electrodes and the second electrodes intersect each other.