# US 11,112,305 B2 · Photoconductive detector device with plasmonic electrodes > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,112,305 B2 - Document ID: US11112305B2 - Status: Granted - Kind: B2 - Application number: 15/792,575 - Filed: 2017-10-24 - Published: 2018-03-01 - Granted: 2021-09-07 - Earliest claimed: 2012-01-23 - Assignees: The Regents of the University of California - Applicants: The Regents of the University of California - Inventors: Mona Jarrahi; Christopher W. Berry; Ning Wang - Web page: https://patentgrep.com/patent/US11112305B2 ## CPC - G01J 3/108: {for measurement in the infrared range} - H10F 30/10: the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors - H10F 77/143: {comprising quantum structures} - H10F 77/20: Electrodes - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/831: characterised by their shape - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 μm) and produces milliwatt-range power levels in the terahertz (THz) frequency range. ## Claims ### Claim 1 A photoconductive device for detecting terahertz (THz) radiation, comprising: a semiconductor substrate; an antenna assembly fabricated on the semiconductor substrate; and a photoconductor assembly fabricated on the semiconductor substrate and coupled to the antenna assembly, wherein the photoconductor assembly includes a plurality of plasmonic contact electrodes and wherein the photoconductive device is configured to receive optical input that impinges upon the photoconductor assembly and the plasmonic contact electrodes such that charge carriers are generated in the semiconductor substrate adjacent the plasmonic contact electrodes in response to the impinging optical input; wherein the plasmonic contact electrodes have sub-wavelength electrode spacing compared to at least one wavelength of the optical input, and wherein the plasmonic contact electrodes are configured to collect the generated charge carriers and are electrically connected to the antenna assembly, whereby the plasmonic contact electrodes provide improved quantum efficiency of the photoconductive device when receiving the optical input. ### Claim 2 (depends on 1) The photoconductive device of claim 1, wherein the semiconductor substrate includes a first thin layer formed on a second thicker layer, and the photoconductor assembly is fabricated on the first thin layer. ### Claim 3 (depends on 2) The photoconductive device of claim 2, wherein the first thin layer of the semiconductor substrate includes at least one material selected from the list consisting of: sapphire, silicon (Si), germanium (Ge), silicon germanium (SiGe), indium gallium arsenide (InGaAs), gallium arsenide (GaAs), indium gallium nitride (InGaN), indium phosphide (InP), Graphene or compounds thereof. ### Claim 4 (depends on 2) The photoconductive device of claim 2, wherein the first thin layer of the semiconductor substrate includes a low-defect thin film with a crystalline structure that is grown on the second thicker layer. ### Claim 5 (depends on 2) The photoconductive device of claim 2, wherein the first thin layer has a thermal conductivity that is equal to or greater than 0.1 W cm−1° C.−1. ### Claim 6 (depends on 1) The photoconductive device of claim 1, further comprising a dielectric passivation layer formed on the semiconductor substrate, wherein the dielectric passivation layer encapsulates at least a portion of the plasmonic contact electrodes and enhances optical pump transmission into the semiconductor substrate. ### Claim 7 (depends on 6) The photoconductive device of claim 6, wherein the dielectric passivation layer includes at least one material selected from the list consisting of: SiN, Si3N4, or SiO2. ### Claim 8 (depends on 1) The photoconductive device of claim 1, wherein the antenna assembly includes at least one antenna type selected from the list consisting of: a monopole antenna, butterfly antenna, a dipole antenna, a spiral-type antenna, a folded dipole antenna, a log-periodic antenna, or a bow tie-type antenna. ### Claim 9 (depends on 1) The photoconductive device of claim 1, wherein the plasmonic contact electrodes have a sub-wavelength periodicity, electrode width and electrode spacing that are all less than the wavelength of the optical input. ### Claim 10 (depends on 1) The photoconductive device of claim 1, wherein the plasmonic contact electrodes are arranged so that the intensity of the optical input is concentrated near the plasmonic contact electrodes such that a high concentration of photo-generated electron-hole pairs are located in the immediate vicinity of the plasmonic contact electrodes. ### Claim 11 (depends on 1) The photoconductive device of claim 1, wherein the plasmonic contact electrodes are configured according to at least one shape selected from the list consisting of: a grating, a rectangular-shape, a cross-shape, a C-shape, a H-shape, a split-ring-resonator, a circular hole, or a rectangular hole. ### Claim 12 (depends on 1) The photoconductive device of claim 1, wherein the plasmonic contact electrodes are metallic electrodes and include at least one metal selected from the list consisting of: gold (Au), silver (Ag), titanium (Ti), or nickel (Ni). ### Claim 13 (depends on 1) The photoconductive device of claim 1, wherein the plasmonic contact electrodes are integrally formed with the antenna assembly and extend from the antenna assembly. ### Claim 14 (depends on 1) The photoconductive device of claim 1, wherein the plasmonic contact electrodes are separately formed from the antenna assembly and are connected to the antenna assembly. ### Claim 15 (depends on 1) The photoconductive device of claim 1, wherein the plasmonic contact electrodes are two-dimensional electrodes that have a height dimension that is less than a width or length dimension. ### Claim 16 (depends on 1) The photoconductive device of claim 1, wherein the plasmonic contact electrodes are three-dimensional electrodes that have a height dimension that is greater than a width or length dimension. ### Claim 17 (depends on 1) The photoconductive device of claim 1, wherein the antenna assembly includes a first antenna terminal coupled to a first lead of the photoconductive device and a second antenna terminal coupled to a second lead of the photoconductive device, and wherein the photoconductor assembly is at least partially located between the first and second antenna terminals. ### Claim 18 (depends on 17) The photoconductive device of claim 17, wherein the plurality of plasmonic contact electrodes includes a first plurality of the plasmonic contact electrodes electrically coupled to the first antenna terminal and a second plurality of the plasmonic contact electrodes electrically coupled to the second antenna terminal. ### Claim 19 (depends on 18) The photoconductive device of claim 18, wherein each of the first and second pluralities of plasmonic contact electrodes are configured as parallel electrodes in a periodic array having sub-wavelength periodicity that excites surface plasmon waves.