# US 11,111,601 B2 · Semimetal compound of Pt

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- Number: US 11,111,601 B2
- Document ID: US11111601B2
- Status: Granted
- Kind: B2
- Application number: 16/448,124
- Filed: 2019-06-21
- Published: 2019-10-03
- Granted: 2021-09-07
- Earliest claimed: 2016-09-28
- Assignees: Tsinghua University; Hon Hai Precision Industry Co., Ltd.
- Applicants: Tsinghua University; Hon Hai Precision Industry Co., Ltd.
- Inventors: Ke-Nan Zhang; Ming-Zhe Yan; Shu-Yun Zhou; Yang Wu; Shou-Shan Fan
- Web page: https://patentgrep.com/patent/US11111601B2

## CPC

- C30B 29/46: Sulfur-, selenium- or tellurium-containing compounds
- C01B 19/007: {Tellurides or selenides of metals (C01B19/002 takes precedence)}
- C30B 9/06: using as solvent a component of the crystal composition
- C30B 25/00: Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C01P 2006/42: Magnetic properties
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtSe2. The method comprises: providing a PtSe2 polycrystalline material; placing the PtSe2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end at a temperature of 1200 degrees Celsius to 1000 degrees Celsius and a second end opposite to the first end and at a temperature of 1000 degrees Celsius to 900 degrees Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

## Claims

### Claim 1

A semimetal compound of Pt, wherein the semimetal compound of Pt is single crystal PtSe2, and the single crystal PtSe2 is type-II Dirac semimetals; wherein the semimetal compound of Pt is prepared by:
placing a PtSe2 polycrystalline material and a chemical transport medium in a reacting chamber;
evacuating the reacting chamber to be vacuum with a pressure lower than 10 Pa;
placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end subjected to a first temperature of about 1200 degrees Celsius to about 1000 degrees Celsius and a second end opposite to the first end and subjected to a second temperature of about 1000 degrees Celsius to about 900 degrees Celsius, and the PtSe2 polycrystalline material is placed in the first end; and
keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

### Claim 2 (depends on 1)

The semimetal compound of Pt of claim 1, wherein the chemical transport medium is selected from the group consisting of SeBr4, I2, Br2, Cl2, and SeCl4.

### Claim 3 (depends on 1)

The semimetal compound of Pt of claim 1, wherein the single crystal PtSe2 exhibits anomalous negative magnetoresistance.

### Claim 4 (depends on 1)

The semimetal compound of Pt of claim 1, wherein the single crystal PtSe2 exhibits quantum spin Hall effect.

### Claim 5 (depends on 1)

The semimetal compound of Pt of claim 1, wherein the single crystal PtSe2 exhibits linear quantum magnetoresistance.

### Claim 6 (depends on 1)

The semimetal compound of Pt of claim 1, wherein a length of the single crystal PtSe2 is approximately 2 millimeters.

### Claim 7 (depends on 1)

The semimetal compound of Pt of claim 1, wherein a thickness of the single crystal PtSe2 is in a range from approximately 10 micrometers to approximately 100 micrometers.

### Claim 8 (depends on 1)

The semimetal compound of Pt of claim 1, wherein a crystalline structure of the single crystal PtSe2 is symmetrical.

### Claim 9 (depends on 1)

The semimetal compound of Pt of claim 1, wherein the single crystal PtSe2 defines a Brillouin zone.

### Claim 10 (depends on 1)

The semimetal compound of Pt of claim 1, wherein during keeping the reacting chamber in the temperature gradient for 10 days to 30 days, the PtSe2 polycrystalline material reacts with the chemical transport medium to form an AL(g) compound and a B(g) element at the first end of the reacting chamber.

### Claim 11 (depends on 10)

The semimetal compound of Pt of claim 10, wherein the AL(g) compound reacts with the B(g) element to form the single crystal PtSe2 semimetal compound and the chemical transport medium at the second end of the reacting chamber, wherein A represents the element Pt of PtSe2, B represents the element Se of PtSe2, and L represents an element of the chemical transport medium that is different from the element Se.

### Claim 12

A semimetal compound of Pt, wherein the semimetal compound of Pt is single crystal PtSe2, and the single crystal PtSe2 is type-II Dirac semimetals.

### Claim 13 (depends on 12)

The semimetal compound of Pt of claim 12, wherein a length of the single crystal PtSe2 is approximately 2 millimeters.

### Claim 14 (depends on 12)

The semimetal compound of Pt of claim 12, wherein a thickness of the single crystal PtSe2 is in a range from approximately 10 micrometers to approximately 100 micrometers.

### Claim 15 (depends on 12)

The semimetal compound of Pt of claim 12, wherein the semimetal compound of Pt is prepared by:
placing a PtSe2 polycrystalline material and a chemical transport medium in a reacting chamber, wherein the chemical transport medium is selected from the group consisting of SeBr4, I2, Br2, Cl2, and SeCl4;
evacuating the reacting chamber to be vacuum with a pressure lower than 10 Pa;
placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end subjected to a first temperature of about 1200 degrees Celsius to about 1000 degrees Celsius and a second end opposite to the first end and subjected to a second temperature of about 1000 degrees Celsius to about 900 degrees Celsius, and the PtSe2 polycrystalline material is placed in the first end; and
keeping the reacting chamber in the temperature gradient for 10 days to 30 days so that a reaction product comprising a single crystal PtSe2 semimetal compound is obtained at the second end of the reacting chamber; wherein during keeping the reacting chamber in the temperature gradient for 10 days to 30 days, the PtSe2 polycrystalline material reacts with the chemical transport medium to form an AL(g) compound and a B(g) element at the first end of the reacting chamber, and the AL(g) compound reacts with the B(g) element to form the single crystal PtSe2 semimetal compound and the chemical transport medium at the second end of the reacting chamber, wherein A represents the element Pt of PtSe2, B represents the element Se of PtSe2, and L represents an element of the chemical transport medium that is different from the element Se.

### Claim 16 (depends on 15)

The semimetal compound of Pt of claim 15, wherein the reacting chamber is a quartz tube initially having an open end and a sealed end opposite to the open end, and the PtSe2 polycrystalline material is located at the sealed end.

### Claim 17 (depends on 16)

The semimetal compound of Pt of claim 16, wherein the evacuating the reacting chamber further comprises sealing the open end by fast heating.

### Claim 18 (depends on 16)

The semimetal compound of Pt of claim 16, wherein the reacting chamber is placed in the temperature gradient by horizontally placing the quartz tube in a tubular furnace.

### Claim 19 (depends on 15)

The semimetal compound of Pt of claim 15, wherein the PtSe2 polycrystalline material is made by following steps:
placing pure Pt and pure Se in a reacting room, wherein a molar ratio of Pt to Se is 1 to 2;
evacuating the reacting room to be vacuum less than 10 Pa and sealing the reacting room;
heating the reacting room to a reacting temperature ranging from 750 degrees Celsius to 850 degrees Celsius and maintain the reacting room at the reacting temperature for a time period from about 50 hours to about 100 hours to obtain the PtSe2 polycrystalline material; and
cooling the reacting room to a room temperature at a cooling rate in a range of about 10 degrees Celsius per hour to about 20 degrees Celsius per hour.