# US 11,111,598 B2 · Crystal growth method in a semiconductor device

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- Number: US 11,111,598 B2
- Document ID: US11111598B2
- Status: Granted
- Kind: B2
- Application number: 16/456,265
- Filed: 2019-06-28
- Published: 2020-12-31
- Granted: 2021-09-07
- Earliest claimed: 2019-06-28
- Assignees: Kabushiki Kaisha Toshiba; The Johns Hopkins University
- Applicants: Kabushiki Kaisha Toshiba; The Johns Hopkins University
- Inventors: Hiro Gangi; Jongil Hwang; Thomas Kempa; Eric Thompson
- Web page: https://patentgrep.com/patent/US11111598B2

## CPC

- C30B 23/02: Epitaxial-layer growth
- H10D 30/66: Vertical DMOS [VDMOS] FETs
- C30B 25/04: Pattern deposit, e.g. by using masks
- C30B 25/18: characterised by the substrate
- C30B 29/60: characterised by shape
- H10D 62/051: {Forming charge compensation regions, e.g. superjunctions}
- H10D 62/111: {Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/26: using liquid deposition
- H10P 14/274: {using seed materials}
- H10P 14/279: {Vapour-liquid-solid growth}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3414: {being group IIIA-VIA materials}
- H10P 14/3466: {Crystal orientation}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 50/283: {by chemical means}
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W 20/0245: {comprising use of blind vias during the manufacture}
- H10W 20/0261: {characterised by the filling method or the material of the conductive fill}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 90/00: Package configurations
- H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence)
- H10W 20/4451: {Semiconductor materials, e.g. polysilicon}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/251: {Materials}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/951: {Materials of bond pads}
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/722: {between stacked chips}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

According to one embodiment, a crystal growth method includes forming a first member at at least a part of a bottom portion of a hole in a structure body. The hole includes the bottom portion and a side portion. The first member includes a first element. The first element is not adhered to at least a part of the side portion in the forming the first member. The crystal growth method includes growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member. The source material includes a second element. The crystal member includes the second element.

## Claims

### Claim 1

A crystal growth method, comprising:
removing at least a portion of a first film, the first film being provided at a bottom portion and at a side portion of a hole in a structure body before the removing;
forming a first member at at least a part of the bottom portion of the hole in the structure body, the first member including a first element; and
growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member, the source material including a second element, the crystal member including the second element.

### Claim 2 (depends on 1)

The method according to claim 1, wherein
the first member contacts the bottom portion before the growing the crystal member, and
the crystal member contacts the bottom portion after the growing the crystal member.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the crystal member contacts at least a portion of the side portion.

### Claim 4 (depends on 1)

The method according to claim 1, wherein
the first member is in a solid phase in the forming the first member, and
the first member is in a liquid phase in the growing the crystal member.

### Claim 5 (depends on 1)

The method according to claim 1, wherein
the structure body includes a third element, and
the first film includes a compound including the third element.

### Claim 6 (depends on 1)

The method according to claim 1, wherein
the hole further has an opening, and
a length of the first member along a first direction is not less than 20% of a length of the opening along a second direction crossing the first direction, the first direction being from the bottom portion toward the opening.

### Claim 7 (depends on 1)

The method according to claim 1, wherein
the hole further has an opening, and
a length of the first member along a first direction is longer than a length of the first member along a second direction crossing the first direction, the first direction being from the bottom portion toward the opening.

### Claim 8 (depends on 1)

The method according to claim 1, wherein
the hole further has an opening, and
a length of the opening along a second direction crossing a first direction is shorter than a maximum value of a length along the second direction of the hole, the first direction being from the bottom portion toward the opening.

### Claim 9 (depends on 1)

The method according to claim 1, wherein
the hole further has an opening, and
a length of the first member along a first direction is not less than 40% of a depth of the hole along the first direction, the first direction being from the bottom portion toward the opening.

### Claim 10 (depends on 1)

The method according to claim 1, wherein
the hole further has an opening,
a direction from the bottom portion toward the opening is aligned with a first direction,
a depth along the first direction of the hole is a sum of a bottom portion length along the first direction of the bottom portion and a side portion length along the first direction of the side portion, and
the bottom portion length is 50% of the depth.

### Claim 11 (depends on 1)

The method according to claim 1, wherein
the structure body includes:
a first region including the bottom portion; and
a second region including the side portion,
a crystal orientation of the crystal member is aligned with a crystal orientation of the first region, and
the crystal orientation of the crystal member is aligned with a crystal orientation of the second region.

### Claim 12 (depends on 1)

The method according to claim 1, further comprising forming an insulating film at the side portion after the forming the first member and before the growing the crystal member.

### Claim 13 (depends on 1)

The method according to claim 1, wherein the first element includes at least one selected from the group consisting of Au, Al, Ag, Bi, Cd, Co, Cu, Dy, Fe, Ga, Gd, In, Mg, Mn, Ni, Os, Pb, Pd, Pt, Te, Ti, and Zn.

### Claim 14 (depends on 1)

The method according to claim 1, wherein the second element includes at least one selected from the group consisting of Si, Ge, Ga, and In.

### Claim 15 (depends on 1)

The method according to claim 1, wherein the crystal member includes at least one selected from the group consisting of Si, Ge, SiGe, GaAs, GaN, and InP.

### Claim 16 (depends on 1)

The method according to claim 1, wherein the source material includes a fourth element including at least one selected from the group consisting of P, B, As, and Mg.

### Claim 17 (depends on 1)

The method according to claim 1, wherein
the supplying the source material includes supplying a first gas, and
the first gas includes at least one selected from the group consisting of hydrogen, nitrogen, argon, and helium.

### Claim 18 (depends on 1)

The method according to claim 1, wherein the forming the first member includes performing at least one of vapor deposition of the first element or long throw sputtering of the first element.

### Claim 19 (depends on 1)

The method according to claim 1, wherein the first element does not adhere to at least a part of the side portion in the forming the first member.