# US 11,111,596 B2 · Single crystal silicon ingot having axial uniformity > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,111,596 B2 - Document ID: US11111596B2 - Status: Granted - Kind: B2 - Application number: 16/570,010 - Filed: 2019-09-13 - Published: 2021-03-18 - Granted: 2021-09-07 - Earliest claimed: 2019-09-13 - Assignees: GlobalWafers Co., Ltd. - Applicants: GlobalWafers Co., Ltd. - Inventors: Carissima Marie Hudson; Jae-Woo Ryu - Web page: https://patentgrep.com/patent/US11111596B2 ## CPC - C30B 15/002: {Continuous growth} - C30B 15/04: adding doping materials, e.g. for n-p-junction - C30B 15/10: Crucibles or containers for supporting the melt - C30B 15/20: Controlling or regulating (controlling or regulating in general G05) - C30B 15/203: {the relationship of pull rate (v) to axial thermal gradient (G)} - C30B 15/305: {Stirring of the melt} - C30B 29/06: Silicon - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR ## Abstract A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot. ## Claims ### Claim 1 A single crystal silicon ingot having a main body portion, wherein the main body portion has a circumferential edge, a central axis having an axial length that is parallel to the circumferential edge, and a radius that extends from the central axis to the circumferential edge, wherein the main body of the single crystal silicon ingot is at least about 1000 millimeters long and the main body of the single crystal silicon ingot has a diameter of at least about 150 millimeters, and further wherein a wafer sliced from any portion of the main body over at least 60% of axial length of the main body of the single crystal silicon ingot, is characterized by non-detectable FPDs (Flow Pattern Defect by Secco etching technique) and DSODs (Direct Surface Oxide Defect particle count after electric breakdown) and zero I-defects (A-defect) by Secco-etching technique, and further wherein the wafer sliced from any portion of the main body over at least 60% of axial length of the main body of the single crystal silicon ingot is characterized by less than 20 COPs at no more than 0.026 um size. ### Claim 2 (depends on 1) The single crystal silicon ingot of claim 1, wherein a wafer sliced from any portion of the main body over at least 80% of axial length of the main body of the single crystal silicon ingot is characterized by less than 20 COPs at no more than 0.026 um size. ### Claim 3 (depends on 1) The single crystal silicon ingot of claim 1, further comprising interstitial oxygen at a main body oxygen concentration between about 10 PPMA and about 35 PPMA, and further wherein the main body interstitial oxygen concentration varies by no more than 20% above and no less than 20% below an average main body oxygen concentration over at least 60% of axial length of the main body of the single crystal silicon ingot. ### Claim 4 (depends on 1) The single crystal silicon ingot of claim 1, further comprising nitrogen at a main body nitrogen concentration of at least about 1×1013 atoms/cm3, and further wherein the main body nitrogen concentration varies by no more than 20% above and no less than 20% below an average main body nitrogen concentration over at least 60% of axial length of the main body of the single crystal silicon ingot. ### Claim 5 (depends on 1) The single crystal silicon ingot of claim 1, further wherein the main body portion has a resistivity that varies by no more than 20% above and no less than 20% below an average main body resistivity at least 60% of axial length of the main body of the single crystal silicon ingot. ### Claim 6 A single crystal silicon ingot having a main body portion, wherein the main body portion has a circumferential edge, a central axis having an axial length that is parallel to the circumferential edge, and a radius that extends from the central axis to the circumferential edge, wherein the main body of the single crystal silicon ingot is at least about 1000 millimeters long and the main body of the single crystal silicon ingot has a diameter of at least about 150 millimeters, and further wherein the main body portion comprises: interstitial oxygen at a main body oxygen concentration between about 10 PPMA and about 35 PPMA, and further wherein the main body interstitial oxygen concentration varies by no more than 20% above and no less than 20% below an average main body oxygen concentration over at least 60% of axial length of the main body of the single crystal silicon ingot, and further wherein the wafer sliced from any portion of the main body over at least 60% of axial length of the main body of the single crystal silicon ingot is characterized by less than 20 COPs at no more than 0.026 um size. ### Claim 7 (depends on 6) The single crystal silicon ingot of claim 6, further comprising nitrogen at a main body nitrogen concentration of at least about 1×1013 atoms/cm3, and further wherein the main body nitrogen concentration varies by no more than 20% above and no less than 20% below an average main body nitrogen concentration over at least 60% of axial length of the main body of the single crystal silicon ingot. ### Claim 8 (depends on 6) The single crystal silicon ingot of claim 6, further wherein the main body portion has a resistivity that varies by no more than 20% above and no less than 20% below an average main body resistivity over at least 60% of axial length of the main body of the single crystal silicon ingot. ### Claim 9 (depends on 6) The single crystal silicon ingot of claim 6, wherein a wafer sliced from any portion of the main body over at least 70% of axial length of the main body of the single crystal silicon ingot is characterized by non-detectable FPDs (Flow Pattern Defect by Secco etching technique) and DSODs (Direct Surface Oxide Defect particle count after electric breakdown) and zero I-defects (A-defect) by Secco-etching technique. ### Claim 10 (depends on 6) The single crystal silicon ingot of claim 6, wherein a wafer sliced from any portion of the main body over at least 70% of axial length of the main body of the single crystal silicon ingot is characterized by less than 20 COPs at no more than 0.026 um size. ### Claim 11 A single crystal silicon ingot having a main body portion, wherein the main body portion has a circumferential edge, a central axis having an axial length that is parallel to the circumferential edge, and a radius that extends from the central axis to the circumferential edge, wherein the main body of the single crystal silicon ingot is at least about 1000 millimeters long and the main body of the single crystal silicon ingot has a diameter of at least about 150 millimeters, and further wherein the main body portion comprises: nitrogen at a main body nitrogen concentration of at least about 1×1013 atoms/cm3, and further wherein the main body nitrogen concentration varies by no more than 20% above and no less than 20% below an average main body nitrogen concentration over at least 60% of axial length of the main body of the single crystal silicon ingot, and further wherein the wafer sliced from any portion of the main body over at least 60% of axial length of the main body of the single crystal silicon ingot is characterized by less than 20 COPs at no more than 0.026 um size. ### Claim 12 (depends on 11) The single crystal silicon ingot of claim 11, further comprising interstitial oxygen at a main body oxygen concentration between about 10 PPMA and about 35 PPMA, and further wherein the main body interstitial oxygen concentration varies by no more than 20% above and no less than 20% below an average main body oxygen concentration over at least 70% of axial length of the main body of the single crystal silicon ingot. ### Claim 13 (depends on 11) The single crystal silicon ingot of claim 11, further wherein the main body portion has a resistivity that varies by no more than 20% above and no less than 20% below an average main body resistivity over at least 60% of axial length of the main body of the single crystal silicon ingot. ### Claim 14 (depends on 11) The single crystal silicon ingot of claim 11, wherein a wafer sliced from any portion of the main body over at least 70% of axial length of the main body of the single crystal silicon ingot is characterized by non-detectable FPDs (Flow Pattern Defect by Secco etching technique) and DSODs (Direct Surface Oxide Defect particle count after electric breakdown) and zero I-defects (A-defect) by Secco-etching technique. ### Claim 15 (depends on 11) The single crystal silicon ingot of claim 11, wherein a wafer sliced from any portion of the main body over at least 70% of axial length of the main body of the single crystal silicon ingot is characterized by less than 20 COPs at no more than 0.026 um size. ### Claim 16 A single crystal silicon ingot having a main body portion, wherein the main body portion has a circumferential edge, a central axis having an axial length that is parallel to the circumferential edge, and a radius that extends from the central axis to the circumferential edge, wherein the main body of the single crystal silicon ingot is at least about 1000 millimeters long and the main body of the single crystal silicon ingot has a diameter of at least about 150 millimeters, and further wherein: the main body portion has a resistivity between about 1000 Ohm-cm and about 100,000 Ohm-cm and further wherein the resistivity varies by no more than 20% above and no less than 20% below an average main body resistivity over at least 60% of axial length of the main body of the single crystal silicon ingot, and further wherein the wafer sliced from any portion of the main body over at least 60% of axial length of the main body of the single crystal silicon ingot is characterized by less than 20 COPs at no more than 0.026 um size. ### Claim 17 (depends on 16) The single crystal silicon ingot of claim 16, further comprising interstitial oxygen at a main body oxygen concentration between about 10 PPMA and about 35 PPMA, and further wherein the main body interstitial oxygen concentration varies by no more than 20% above and no less than 20% below an average main body oxygen concentration over at least 60% of axial length of the main body of the single crystal silicon ingot. ### Claim 18 (depends on 16) The single crystal silicon ingot of claim 16, further comprising nitrogen at a main body nitrogen concentration of at least about 1×1013 atoms/cm3, and further wherein the main body nitrogen concentration varies by no more than 20% above and no less than 20% below an average main body nitrogen concentration over at least 60% of axial length of the main body of the single crystal silicon ingot. ### Claim 19 (depends on 16) The single crystal silicon ingot of claim 16, wherein a wafer sliced from any portion of the main body over at least 60% of axial length of the main body of the single crystal silicon ingot is characterized by non-detectable FPDs (Flow Pattern Defect by Secco etching technique) and DSODs (Direct Surface Oxide Defect particle count after electric breakdown) and zero I-defects (A-defect) by Secco-etching technique. ### Claim 20 (depends on 16) The single crystal silicon ingot of claim 16, wherein a wafer sliced from any portion of the main body over at least 70% of axial length of the main body of the single crystal silicon ingot is characterized by less than 20 COPs at no more than 0.026 um size.