# US 11,111,592 B2 · Manufacturing apparatus and manufacturing method for semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,111,592 B2 - Document ID: US11111592B2 - Status: Granted - Kind: B2 - Application number: 15/780,303 - Filed: 2016-11-22 - Published: 2018-12-13 - Granted: 2021-09-07 - Earliest claimed: 2015-12-03 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Tomohisa Hoshino; Masato Hamada - Web page: https://patentgrep.com/patent/US11111592B2 ## CPC - C25D 17/001: {Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells} - C25D 5/00: Electroplating characterised by the process; Pretreatment or after-treatment of workpieces - C25D 5/18: Electroplating using modulated, pulsed or reversing current - C25D 5/617: {Crystalline layers} - C25D 7/123: {Semiconductors first coated with a seed layer or a conductive layer} - C25D 17/005: {Contacting devices} - C25D 17/007: {Current directing devices} - C25D 17/10: Electrodes {, e.g. composition, counter electrode} - C25D 21/12: Process control or regulation (controlling or regulating in general G05) - H10P 14/46: using a liquid - C25D 3/38: of copper - C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate. ## Claims ### Claim 1 A manufacturing apparatus for a semiconductor device, comprising: a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate while being in contact with the substrate, wherein the electrolytic processing unit comprises a main body, a direct electrode is provided on a surface of the main body and configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode is provided within the main body and is configured to form an electric field in the processing liquid supplied onto the substrate, wherein the terminal is held by the main body and is protruded from the surface of the main body. ### Claim 2 (depends on 1) The manufacturing apparatus for the semiconductor device of claim 1, wherein the main body is made of an insulator. ### Claim 3 (depends on 2) The manufacturing apparatus for the semiconductor device of claim 2, wherein the indirect electrode is plural in number, and the indirect electrodes are stacked on top of each other within the main body. ### Claim 4 (depends on 1) The manufacturing apparatus for the semiconductor device of claim 1, further comprising: a moving mechanism configured to move the substrate holding unit or the electrolytic processing unit relatively to each other. ### Claim 5 (depends on 1) The manufacturing apparatus for the semiconductor device of claim 1, further comprising: a rotating mechanism configured to rotate the substrate holding unit. ### Claim 6 (depends on 1) The manufacturing apparatus for the semiconductor device of claim 1, wherein the substrate holding unit is equipped with a vessel having an open top, and the substrate is held within the vessel and the processing liquid is stored in the vessel. ### Claim 7 (depends on 1) A manufacturing method for a semiconductor device by using the manufacturing apparatus of claim 1, comprising: a first process of placing the substrate holding unit configured to hold the substrate and the electrolytic processing unit configured to perform the electrolytic processing on the substrate held by the substrate holding unit to face each other; a second process of supplying the processing liquid from the processing liquid supply unit onto the substrate held by the substrate holding unit; a third process of bringing the terminal configured to apply the voltage to the substrate into contact with the substrate and brining the direct electrode belonging to the electrolytic processing unit into contact with the processing liquid; a fourth process of forming an electric field in the processing liquid by applying a voltage to the indirect electrode belonging to the electrolytic processing unit to move processing target ions in the processing liquid to a substrate side; and a fifth process of oxidizing or reducing the processing target ions moved to the substrate side by applying a voltage between the direct electrode and the substrate, wherein the electrolytic processing unit holds the terminal. ### Claim 8 (depends on 7) The manufacturing method for the semiconductor device of claim 7, wherein the main body made of an insulator. ### Claim 9 (depends on 8) The manufacturing method for the semiconductor device of claim 8, wherein the indirect electrode is plural in number, and the indirect electrodes are stacked on top of each other within the main body. ### Claim 10 (depends on 7) The manufacturing method for the semiconductor device of claim 7, wherein in the third process, the terminal is brought into contact with the substrate by adjusting a height of the terminal. ### Claim 11 (depends on 7) The manufacturing method for the semiconductor device of claim 7, wherein, in the third process, the substrate holding unit or the electrolytic processing unit are moved relatively to each other by a moving mechanism. ### Claim 12 (depends on 7) The manufacturing method for the semiconductor device of claim 7, wherein, in the second process, the processing liquid is supplied from the processing liquid supply unit onto the substrate held by the substrate holding unit while rotating the substrate holding unit by a rotating mechanism. ### Claim 13 (depends on 7) The manufacturing method for the semiconductor device of claim 7, wherein the substrate holding unit is equipped with a vessel having an open top, and in the second process, while holding the substrate within the vessel, the processing liquid is supplied and stored into the vessel by the processing liquid supply unit.